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參數資料
| 型號： | MRF8S18120HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780, CASE 465-06, 2 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 409K |
| 代理商： | MRF8S18120HR3 |
MRF8S18120HR3 MRF8S18120HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequen-
cies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all
typical cellular base station modulation formats.
Typical GSM Performance: VDD =28 Volts,IDQ = 800 mA, Pout =
72 Watts CW
Frequency
Gps
(dB)
ηD
(%)
1805 MHz
18.2
49.8
1840 MHz
18.6
51.4
1880 MHz
18.7
53.9
Capable of Handling 7:1 VSWR, @ 32 Vdc, 1840 MHz, 150 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout)
Typical Pout @ 1 dB Compression Point
120 Watts CW
Typical GSM EDGE Performance: VDD =28 Volts,IDQ = 800 mA, Pout =
46 Watts Avg.
Frequency
Gps
(dB)
ηD
(%)
SR1
@ 400 kHz
(dBc)
SR2
@ 600 kHz
(dBc)
EVM
(% rms)
1805 MHz
17.9
41.0
--64
--76
1.6
1840 MHz
18.2
41.9
--63
--76
1.7
1880 MHz
18.3
43.2
--61
--76
2.0
Features
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +65
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Document Number: MRF8S18120H
Rev. 1, 10/2010
Freescale Semiconductor
Technical Data
1805--1880 MHz, 72 W CW, 28 V
GSM, GSM EDGE
LATERAL N--CHANNEL
RF POWER MOSFETs
MRF8S18120HR3
MRF8S18120HSR3
CASE 465--06, STYLE 1
NI--780
MRF8S18120HR3
CASE 465A--06, STYLE 1
NI--780S
MRF8S18120HSR3
Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF8S18120HR3_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF8S18120HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S18120HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S18120HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 120W NI780HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S18210WGHSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 1.8GHZ 210W RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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