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參數資料
| 型號： | MRF8S9220HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數： | 1/14頁 |
| 文件大小： | 347K |
| 代理商： | MRF8S9220HSR3 |
MRF8S9220HR3 MRF8S9220HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 920 to
960 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ =
1600 mA, Pout = 65 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF.
Frequency
Gps
(dB)
hD
(%)
Output PAR
(dB)
ACPR
(dBc)
920 MHz
19.7
35.1
6.1
-37.4
940 MHz
19.8
35.3
6.2
-37.5
960 MHz
19.4
35.7
6.1
-37.4
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 317 Watts CW
Output Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
Typical Pout @ 1 dB Compression Point ] 220 Watts CW
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate-Source Voltage Range for Improved Class C
Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
RoHS Compliant
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Source Voltage
VDSS
-0.5, +70
Vdc
Gate-Source Voltage
VGS
-6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
-65 to +150
°C
Case Operating Temperature
TC
150
°C
Operating Junction Temperature (1,2)
TJ
225
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value (2,3)
Unit
Thermal Resistance, Junction to Case
Case Temperature 81‘°C, 65 W CW, 28 Vdc, IDQ = 1600 mA
Case Temperature 81°C, 220 W CW, 28 Vdc, IDQ = 1600 mA
RθJC
0.39
0.32
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
Document Number: MRF8S9220H
Rev. 0, 11/2009
Freescale Semiconductor
Technical Data
920-960 MHz, 65 W AVG., 28 V
SINGLE W-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
MRF8S9220HR3
MRF8S9220HSR3
CASE 465A-06, STYLE 1
NI-780S
MRF8S9220HSR3
CASE 465-06, STYLE 1
NI-780
MRF8S9220HR3
Freescale Semiconductor, Inc., 2009. All rights reserved.
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相關代理商/技術參數 |
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| MRF8S9220HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 WCDMA 66W 28V NI780S RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9232NR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 60W OM780-2 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9260HR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 260W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9260HR5 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 260W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8S9260HSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 900MHZ 260W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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