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參數資料
| 型號： | MRF9085LSR3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 128K 3.3 VOLT SERIAL CONFIGURATION PROM |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | NI-780S, CASE 465A-06, 2 PIN |
| 文件頁數： | 1/8頁 |
| 文件大小： | 491K |
| 代理商： | MRF9085LSR3 |
1
MRF9085LR3 MRF9085LSR3
Motorola, Inc. 2004
The RF Sub-Micron MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of these devices make them ideal for large-signal, common-source amplifier
applications in 26 volt base station equipment.
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 700 mA
IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power — 20 Watts
Power Gain — 17.9 dB
Efficiency — 28%
Adjacent Channel Power —
750 kHz: -45.0 dBc @ 30 kHz BW
1.98 MHz: -60.0 dBc @ 30 kHz BW
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW
Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
Low Gold Plating Thickness on Leads, 40
μ″
Nominal.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
=
25
°
C
Derate above 25
°
C
P
D
250
1.43
Watts
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
200
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case
R
θ
JC
0.7
°
C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9085/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF9085LR3
MRF9085LSR3
880 MHz, 90 W, 26 V
LATERAL N-CHANNEL
RF POWER MOSFETs
CASE 465-06, STYLE 1
NI-780
MRF9085LR3
CASE 465A-06, STYLE 1
NI-780S
MRF9085LSR3
REV 9
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關PDF資料 |
PDF描述 |
|---|---|
| MRF9085LR3 | 880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9085 | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF9085R3 | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF9085S | RF Power MOSFETs(RF功率MOS場效應管) |
| MRF9085SR3 | RF Power MOSFETs(RF功率MOS場效應管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MRF9085LSR5 | 功能描述:射頻MOSFET電源晶體管 90W RF PWR LDMOS NI780LS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF9085S | 制造商:Motorola Inc 功能描述: |
| MRF9100 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:GSM/EDGE 900 MHz, 110 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs |
| MRF9100LR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF9100LSR3 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
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