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參數資料
| 型號： | MRF9820T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SURFACE MOUNT LOW NOISE ENHANCEMENT MODE GaAs CASCODE |
| 中文描述： | UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件頁數： | 1/4頁 |
| 文件大小： | 75K |
| 代理商： | MRF9820T1 |
1
MRF9820T1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Small Signal Line
The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use
in low noise front end amplifier or downconverter applications. The device
contains two enhancement mode MESFETs connected in cascode to allow
access to both gates for gain control or injection of LO signals. This device is
well suited for low voltage, low current front–end applications such as paging,
cellular, GSM, DECT, and other portable wireless systems.
Low Noise Figure: 1.5 dB @ 940 MHz, 1 mA
Built In ESD Protection
Does Not Require a Negative Supply Voltage
RF Power Gain 16 dB @ 940 MHz, 1 mA
High Third Order Intercept Point
Industry Standard SOT–143 Surface Mount Package
Order MRF9820T1 for Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
VG1S
VG2S
ID
PD
6
Vdc
Gate 1–Source Voltage
–4
Vdc
Gate 2–Source Voltage
–4
Vdc
Drain Current — Continuous
IDSS
231
4.3
—
Total Device Dissipation @ TC = 75
°
C
Derate above 75
°
C
mW
mW/
°
C
Storage Temperature Range
Tstg
Tch
–55 to +150
°
C
Operating Channel Temperature
150
°
C
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance, Channel to Case
R
θ
ch–C
325
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Gate 1 Leakage Current (VDS = 2 V, VG1S = 0.425 V, VG2S = 1 V)
Gate 2 Leakage Current (VDS = 2 V, VG1S = 0.5 V, VG2S = 0.425 V)
Threshold Voltage (VDS = 3 V, VG2S = 1 V, ID = 1 mA)
IG1S
IG2S
Vth
4
μ
A
4
μ
A
275 (min)
425 (max)
mV
Gate 1–to–Source Cutoff Voltage (VDS = 2 V, VG2S = 1 V, ID = 200
μ
A)
VG1S(off)
100 (min)
360 (max)
mV
Gate 2–to–Source Cutoff Voltage (VDS = 2 V, VG1S = 0.5 V, ID = 200
μ
A)
VG2S(off)
10 (min)
370 (max)
mV
Forward Transconductance (VDS = 2 V, VG2S = 1 V, ID = 1 mA)
Drain–to–Source Leakage Current (VDS = 2 V, VG1S = 0 V, VG2S = 0 V)
gm
9 (min)
mS
IDS(off)
2 (max)
μ
A
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9820T1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 318A–05, STYLE 11
(SOT–143)
SURFACE MOUNT
LOW NOISE
ENHANCEMENT MODE
GaAs CASCODE
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