欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: MSAGZ52F120A
廠商: MICROSEMI CORP-COLORADO
元件分類: 功率晶體管
英文描述: Circular Connector; No. of Contacts:37; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:15-35 RoHS Compliant: No
中文描述: 52 A, 1200 V, N-CHANNEL IGBT
文件頁數: 1/2頁
文件大小: 52K
代理商: MSAGZ52F120A
MSAGZ52F120A
MSAHZ52F120A
1200 Volts
52 Amps
3.2 Volts vce(sat)
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAH(G)Z52F120B
high frequency IGBT, low switching losses
anti-parallel FREDiode (MSAHZ52F120A only)
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
25
°
C
Collector-to-Gate Breakdown Voltage
@ T
J
25
°
C, R
GS
= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25
°
C
Tj=
90
°
C
Peak Collector Current (pulse width limited by T
jmax
,)
Tj= 25
°
C
Tj=
90
°
C
Avalanche energy (single pulse)
@ I
C
= 25A,
V
CC
= 50V, L= 200
μ
H,
R
G
= 25
, Tj= 25
°
C
Short circuit current (SOA) ,
V
CE
1200V, T
J
= 150
°
C, t
sc
10
μ
s
Short circuit (reverse) current (RBSOA) ,
V
CE
1200V, T
J
= 150
°
C
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Continuous Source Current (Body Diode, MSAHZ52F120A only)
Pulse Source Current (Body Diode, MSAHZ52F120A only)
Thermal Resistance, Junction to Case
Mechanical Outline
BV
CES
1200
Volts
BV
CGR
V
GES
V
GEM
I
C25
I
C90
1200
+/-20
+/-30
52
33
Volts
Volts
Volts
Amps
I
CM(25)
I
CM(90)
104
66
Amps
E
AS
65
mJ
I
C(sc)
260
66
300
A
A
I
C(sc)RBSOA
P
D
T
j
T
stg
I
S
I
SM
θ
Watts
°
C
°
C
Amps
Amps
°
C/W
-55 to +150
-55 to +150
50
100
0.4
Maximum Ratings @ 25
°
C (unless otherwise specified)
Datasheet# MSC0295A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
COLLECTOR
EMITTER (MS…A)
GATE (MS…B)
相關PDF資料
PDF描述
MSAHX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAHX75L60C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSARS200S10L HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER
MSARS200S10LR HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER
相關代理商/技術參數
參數描述
MSAHR36F120A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 36A 3PIN COOLPACK1 - Bulk
MSAHR55F60A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 55A 3PIN COOLPACK1 - Bulk
MSAHR57L120A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 57A 3PIN COOLPACK1 - Bulk
MSAHR70L60A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 70A 3PIN COOLPACK1 - Bulk
MSAHX60F60A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP N-CH 600V 60A 3PIN COOLPACK1 - Bulk
主站蜘蛛池模板: 沅陵县| 孝昌县| 嘉义县| 高碑店市| 阆中市| 洪雅县| 自贡市| 施甸县| 宁远县| 丹阳市| 康保县| 旅游| 桂平市| 淮安市| 石泉县| 蚌埠市| 天全县| 舟山市| 大港区| 杭州市| 钟山县| 易门县| 唐山市| 武邑县| 东乡县| 信阳市| 普安县| 遵义县| 红原县| 从化市| 内黄县| 鄱阳县| 交口县| 沧源| 民乐县| 富宁县| 密山市| 门源| 安丘市| 乌拉特前旗| 邹平县|