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參數資料
| 型號： | MSB92WT1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT |
| 中文描述： | 150 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數： | 1/4頁 |
| 文件大小： | 78K |
| 代理商： | MSB92WT1 |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
This PNP Silicon Planar Transistor is designed for general purpose amplifier
applications. This device is housed in the SC-70/SOT-323 package
which is designed for low power surface mount applications.
Available in 8 mm, 7-inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(TA = 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC
–300
Vdc
Collector-Emitter Voltage
–300
Vdc
Emitter-Base Voltage
–5.0
Vdc
Collector Current — Continuous
150
mAdc
DEVICE MARKING
MSB92WT1 = H2D
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation(1)
PD
TJ
Tstg
150
mW
Junction Temperature
150
°
C
Storage Temperature Range
–55 ~ +150
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage (IC = –100
μ
Adc, IE = 0)
Emitter-Base Breakdown Voltage (IE = –100
μ
Adc, IE = 0)
Collector-Base Cutoff Current (VCB = –200 Vdc, IE = 0)
Emitter–Base Cutoff Current (VEB = –6.0 Vdc, IB = 0)
DC Current Gain(2)
(VCE = –10 Vdc, IC = –1.0 mAdc)
(VCE = –10 Vdc, IC = –30 mAdc)
Collector-Emitter Saturation Voltage(2) (IC = –200 mAdc, IB = –2.0 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. Pulse Test: Pulse Width
≤
300
μ
s, D.C.
≤
2%.
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
–300
—
Vdc
–300
—
Vdc
–5.0
—
Vdc
—
–0.1
μ
A
—
–0.1
μ
A
hFE1
hFE2
25
40
—
—
—
VCE(sat)
—
–0.5
Vdc
Preferred
devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MSB92WT1/D
SEMICONDUCTOR TECHNICAL DATA
PNP GENERAL PURPOSE
HIGH VOLTAGE
TRANSISTORS
SURFACE MOUNT
Motorola Preferred Devices
CASE 419–02, STYLE 3
SC–70/SOT–323
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
REV 1
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| MSB92WT1G | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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| MSB-G | 功能描述:集管和線殼 OPEN TOP .100 GOLD PLATED RoHS:否 產品種類:1.0MM Rectangular Connectors 產品類型:Headers - Pin Strip 系列:DF50 觸點類型:Pin (Male) 節距:1 mm 位置/觸點數量:16 排數:1 安裝風格:SMD/SMT 安裝角:Right 端接類型:Solder 外殼材料:Liquid Crystal Polymer (LCP) 觸點材料:Brass 觸點電鍍:Gold 制造商:Hirose Connector |
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