- 您現在的位置：買賣IC網 > PDF目錄382350 > MSD42WT1G (ON SEMICONDUCTOR) NPN Silicon General Purpose High Voltage Transistors PDF資料下載
參數資料
| 型號： | MSD42WT1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN Silicon General Purpose High Voltage Transistors |
| 中文描述： | 150 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 318D-04, SC-59, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 61K |
| 代理商： | MSD42WT1G |
Semiconductor Components Industries, LLC, 2004
January, 2004 Rev. 6
1
Publication Order Number:
MSD42WT1/D
MSD42WT1, MSD42T1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistors
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323 and
SC59 packages which are designed for low power surface mount
applications.
Features
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
(BR)CBO
300
Vdc
Collector-Emitter Voltage
V
(BR)CEO
300
Vdc
Emitter-Base Voltage
V
(BR)EBO
6.0
Vdc
Collector Current Continuous
I
C
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
P
D
150
mW
Junction Temperature
T
J
150
°
C
Storage Temperature Range
T
stg
55
+150
°
C
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(I
C
= 1.0 mAdc, I
B
= 0)
V
(BR)CEO
300
Vdc
Collector-Base Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(I
E
= 100 Adc, I
E
= 0)
V
(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0)
I
CBO
0.1
A
EmitterBase Cutoff Current
(V
EB
= 6.0 Vdc, I
B
= 0)
I
EBO
0.1
A
DC Current Gain (Note 2)
(V
CE
= 10 Vdc, I
C
= 1.0 mAdc)
(V
CE
= 10 Vdc, I
C
= 30 mAdc)
h
FE1
h
FE2
25
40
Collector-Emitter Saturation Voltage
(Note 2) (I
C
= 20 mAdc,
I
B
= 2.0 mAdc)
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width
≤
300 s, D.C.
≤
2%.
V
CE(sat)
0.5
Vdc
SC70 (SOT323)
CASE 419
(SCALE 2:1)
MARKING DIAGRAMS
3
1D M
1
2
Device
Package
Shipping
ORDERING INFORMATION
MSD42WT1
SC70/SOT323 3000/Tape & Reel
1D = Device Marking Code
M
= Date Code
Preferred
devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
3
1
2
SC59
CASE 318D
(SCALE 2:1)
J1D M
MSD42T1
SC59
3000/Tape & Reel
MSD42WT1G
3000/Tape & Reel
SC70/SOT323
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
相關PDF資料 |
PDF描述 |
|---|---|
| MSG36E41 | SiGe HBT type |
| MSG43004 | SiGe HBT type For low-noise RF amplifier |
| MSK103 | ULTRA HIGH VOLTAGE DUAL OPERATIONAL AMPLIFIER |
| MSK103B | ULTRA HIGH VOLTAGE DUAL OPERATIONAL AMPLIFIER |
| MSK3001 | 30V N-Channel PowerTrench MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MSD42WT1G_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:NPN Silicon General Purpose High Voltage Transistors |
| MSD4410C | 功能描述:LED 顯示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數位數量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube |
| MSD4440C | 功能描述:LED 顯示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數位數量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube |
| MSD4440C_Q | 功能描述:LED 顯示器和配件 .40" 2-DI GN GY FACE RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數位數量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube |
| MSD4910C | 功能描述:LED 顯示器和配件 .40" 2-DI HR GY FACE RoHS:否 制造商:Avago Technologies 顯示器類型:7 Segment 數位數量:2 字符大小:7.8 mm x 14.22 mm 照明顏色:Red 波長:628 nm 共用管腳:Common Anode 工作電壓:2.05 V 工作電流:20 mA 最大工作溫度:+ 85 C 最小工作溫度:- 35 C 封裝:Tube |
發布緊急采購，3分鐘左右您將得到回復。