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參數資料
| 型號： | MSG36E41 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SiGe HBT type |
| 中文描述： | 2 CHANNEL, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SSSMINI6-F1, 6 PIN |
| 文件頁數： | 1/7頁 |
| 文件大小： | 141K |
| 代理商： | MSG36E41 |
Transistors
MSG36E41
SiGe HBT type
1
Publication date: November 2004
SJC00319BED
For low-noise RF amplifier
■
Features
Compatible between high breakdown voltage and high cut-off frequency
Low noise, high-gain amplification
Two elements incorporated into one package (Each transistor is separated)
Reduction of the mounting area and assembly cost by one half
■
Basic Part Number
MSG33004
+
MSG33001
■
Absolute Maximum Ratings
T
a
=
25
°
C
Marking Symbol: 6D
Internal Connection
Unit: mm
0 to 0.02
6
5
4
1
2
3
1
±
0
(
0
1.00
±
0.05
Display at No.1 lead
0
±
0
0
(0.35)
(0.35)
0
+
-
0
0.12
+0.02
-
4
Tr1
Tr2
5
6
1
3
2
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
9 V, I
E
=
0
V
CE
=
6 V, I
B
=
0
V
EB
=
1 V, I
C
=
0
V
CE
=
3 V, I
C
=
15 mA
V
CE
=
3 V, I
C
=
30 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
30 mA, f
=
2 GHz
V
CE
=
3 V, I
C
=
15 mA, f
=
2 GHz
V
CB
= 3 V, I
E
= 0, f = 1 MHz
1
μ
A
μ
A
μ
A
Collector-emitter cutoff current (Base open)
I
CEO
1
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
1
Forward current transfer ratio
100
220
Transition frequency
*
f
T
17
GHz
Forward transfer gain
*
S
21e
2
NF
6.0
9.0
dB
Noise figure
*
1.4
2.0
dB
Collector output capacitance
(Common base, input open circuited)
*
C
ob
0.6
0.9
pF
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
Tr1
1: Base (Tr1)
2: Emitter (Tr1)
3: Base (Tr2)
4: Collector (Tr2)
5: Emitter (Tr2)
6: Collector (Tr1)
SSSMini6-F1 Package
Parameter
Symbol
Rating
Unit
Tr1
Collector-base voltage
(Emitter open)
V
CBO
9
V
Collector-emitter voltage
(Base open)
V
CEO
6
V
Emitter-base voltage
(Collector open)
Collector current
V
EBO
1
V
I
C
100
mA
Tr2
Collector-base voltage
(Emitter open)
V
CBO
9
V
Collector-emitter voltage
(Base open)
V
CEO
6
V
Emitter-base voltage
(Collector open)
Collector current
V
EBO
1
V
I
C
30
mA
Overall
Total power dissipation
*
P
T
T
j
125
mW
Junction temperature
125
°
C
°
C
Storage temperature
T
stg
55 to
+
125
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. Observe precautions for handling. Electrostatic sensitive devices.
3.*: Verified by random sampling
Note)*:
Copper plate at the collector is 5.0 cm
2
on substrate at 10 mm
×
12 mm
×
0.8 mm.
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