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參數資料
| 型號： | MT58L128V18P |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | 128K x 18, Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| 中文描述： | 128K的× 18，流水線，SCD的SyncBurst的SRAM（處理器，流水線式，單循環取消選擇，同步脈沖靜態存儲器） |
| 文件頁數： | 1/25頁 |
| 文件大小： | 487K |
| 代理商： | MT58L128V18P |
1
2Mb: 128K x 18, 64K x 32/36 Pipelined, SCD SyncBurst SRAM
MT58L128L18P_2.p65 – Rev. 8/00
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2000, Micron Technology, Inc.
2Mb: 128K x 18, 64K x 32/36
PIPELINED, SCD SYNCBURST SRAM
2Mb SYNCBURST
SRAM
FEATURES
Fast clock and OE# access times
Single +3.3V +0.3V/-0.165V power supply (V
DD
)
Separate +3.3V or +2.5V isolated output buffer
supply (V
DD
Q)
SNOOZE MODE for reduced-power standby
Single-cycle deselect (Pentium
BSRAM-compatible)
Common data inputs and data outputs
Individual BYTE WRITE control and GLOBAL
W RITE
Three chip enables for simple depth expansion
and address pipelining
Clock-controlled and registered addresses, data
I/Os and control signals
Internally self-timed WRITE cycle
Burst control pin (interleaved or linear burst)
Automatic power-down for portable applications
100-pin TQFP package
165-pin FBGA package
Low capacitive bus loading
x18, x32, and x36 options available
OPTIONS
Timing (Access/Cycle/MHz)
3.5ns/5ns/200 MHz
3.5ns/6ns/166 MHz
4.0ns/7.5ns/133 MHz
5ns/10ns/100 MHz
MARKING
-5
-6
-7.5
-10
Configurations
3.3V I/O
128K x 18
64K x 32
64K x 36
2.5V I/O
128K x 18
64K x 32
64K x 36
MT58L128L18P
MT58L64L32P
MT58L64L36P
MT58L128V18P
MT58L64V32P
MT58L64V36P
Package
100-pin TQFP
165-pin FBGA
T
F
Operating Temperature Range
Commercial (0°C to +70°C)
None
Part Number Example:
MT58L128L18PT-10*
*A Part Marking Guide for the FBGA devices can be found on Micron’s
http://www.micronsemi.com/support/index.html.
MT58L128L18P, MT58L64L32P, MT58L64L36P;
MT58L128V18P, MT58L64V32P, MT58L64V36P
3.3V V
DD
, 3.3V or 2.5V I/O, Pipelined, Single-
Cycle Deselect
100-Pin TQFP*
GENERAL DESCRIPTION
The Micron
SyncBurst
SRAM family employs
high-speed, low-power CMOS designs that are fabri-
cated using an advanced CMOS process.
Micron’s 2Mb SyncBurst SRAMs integrate a 128K x
18, 64K x 32, or 64K x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst
counter. All synchronous inputs pass through registers
controlled by a positive-edge-triggered single clock
input (CLK). The synchronous inputs include all
addresses, all data inputs, active LOW chip enable (CE#),
two additional chip enables for easy depth expansion
165-Pin FBGA
(Preliminary Package Data)
*JEDEC-standard MS-026 BHA (LQFP).
相關PDF資料 |
PDF描述 |
|---|---|
| MT58L64L32P | 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| MT58L64V32P | 64K x 32,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| MT58L64L36P | 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| MT58L64V36P | 64K x 36,Pipelined, SCD SyncBurst SRAM(2Mb，流水線式，單循環取消選擇，同步脈沖靜態存儲器) |
| MT58L128L32D1 | 128K x 32，3.3V I/O Pipelined, DCD SyncBurst SRAM(4Mb，3.3V輸入/輸出，流水線式，雙循環取消選擇，同步脈沖靜態存儲器) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MT58L128V18PT-7.5 | 制造商:Micron Technology Inc 功能描述: |
| MT58L128V32F1 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128V32P1T-10 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V32P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128V36F1 | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
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