- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385641 > MT9VDDT1672A (Micron Technology, Inc.) DDR SDRAM DIMM PDF資料下載
參數(shù)資料
| 型號(hào)： | MT9VDDT1672A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DDR SDRAM DIMM |
| 中文描述： | DDR SDRAM的內(nèi)存 |
| 文件頁(yè)數(shù)： | 1/29頁(yè) |
| 文件大?。?/td> | 542K |
| 代理商： | MT9VDDT1672A |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE.
09005aef808f8ccd
DD9C16_32X72AG_B.fm - Rev. B 2/03 EN
1
2003 Micron Technology, Inc.
128MB, 256MB (x72, ECC)
184-Pin DDR SDRAM DIMM
DDR SDRAM
DIMM
MT9VDDT1672A - 128MB
MT9VDDT3272A - 256MB
For the latest data sheet, please refer to the Micron
site:
www.micron.com/moduleds
Features JEDEC-standard 184-pin dual in-line memory
module (DIMM)
Fast data transfer rates PC1600, PC2100, or PC2700
Utilizes 200 MT/s, 266 MT/s, and 333MT/s DDR
SDRAM components
ECC-optimized pinout 128MB (16 Meg x 72), 256MB
(32 Meg x 72)
V
DD
= V
DD
Q= +2.5V
V
DDSPD
= +2.3V to +3.6V
+2.5V I/O (SSTL_2 compatible)
Commands entered on each positive CK edge
DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
Internal, pipelined double data rate (DDR)
architecture; two data accesses per clock cycle
Bidirectional data strobe (DQS) transmitted/
received with data—i.e., source-synchronous data
capture
Differential clock inputs (CK and CK#)
Four internal device banks for concurrent operation
Programmable burst lengths: 2, 4, or 8
Auto precharge option
Auto Refresh and Self Refresh Modes
15.6μs (128MB), 7.8125μs (256MB) maximum
average periodic refresh interval
Serial Presence-Detect (SPD) with EEPROM
Programmable READ CAS latency
Figure 1: 184-Pin DIMM (MO-206)
OPTIONS
Package
Unbuffered
184-pin DIMM (Gold)
184-pin DIMM (Lead-Free)
Frequency/CAS Latency
6ns, 333 MT/s (167 MHz), CL = 2.5
7.5ns, 266 MT/s (133 MHz ), CL = 2
7.5ns, 266 MT/s (133 MHz ), CL = 2
7.5ns, 266 MT/s (133 MHz ), CL = 2.5
10ns, 200 MT/s (100 MHz ), CL = 2
Self Refresh
Standard
Low Power
MARKING
A
G
Y
-335
-262
-26A
-265
-202
None
L
Table 1:
Address Table
128MB
4K
4K (A0–A11)
4 (BA0, BA1)
16 Meg x 8
1K (A0–A9)
1 (S0#)
256MB
8K
8K (A0–A12)
4 (BA0, BA1)
32 Meg x 8
1K (A0–A9)
1 (S0#)
Refresh Count
Row Addressing
Device Bank Addressing
Device Configuration
Column Addressing
Module Rank Addressing
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT9VDDT3272A | DDR SDRAM DIMM |
| MTB2P50E | Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) |
| MTB50P03HDL | Power MOSFET 50 Amps, 30 Volts, Logic Level(50A, 30V, D2PAK, P溝道功率MOSFET) |
| MTD20N06HDLT4 | Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDLT4G | Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT9VDDT1672AG-202A1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265B1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265D4 | 制造商:Micron Technology Inc 功能描述: |
| MT9VDDT1672AG-26AA1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-26AB1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。