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參數資料
| 型號： | MTB2P50E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) |
| 中文描述： | 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-04, D2PAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 85K |
| 代理商： | MTB2P50E |
Semiconductor Components Industries, LLC, 2006
June, 2006 Rev. 4
1
Publication Order Number:
MTB2P50E/D
MTB2P50E
Preferred Device
Power MOSFET
2 Amps, 500 Volts
PChannel D
2
PAK
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltageblocking capability without degrading
performance over time. In addition, this Power MOSFET is designed
to withstand high energy in the avalanche and commutation modes.
The energy efficient design also offers a draintosource diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Robust High Voltage Termination
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
PbFree Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
V
DSS
V
DGR
V
GS
V
GSM
500
Vdc
DrainGate Voltage (R
GS
= 1.0 M )
GateSource Voltage Continuous
NonRepetitive (t
p
≤
10 ms)
500
Vdc
±
20
±
40
Vdc
Vpk
Drain Current Continuous
Drain Current
Continuous @ 100
°
C
Drain Current
Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
2.0
1.6
6.0
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
75
0.6
2.5
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 100 Vdc, V
GS
= 10 Vdc,
I
L
= 4.0 Apk, L = 10 mH, R
G
= 25 )
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1)
E
AS
80
mJ
R
JC
R
JA
R
JA
T
L
1.67
62.5
50
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 sec
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
260
°
C
D
S
G
2 AMPERES, 500 VOLTS
R
DS(on)
= 6
PChannel
Device
Package
Shipping
ORDERING INFORMATION
D
2
PAK
CASE 418B
STYLE 2
1
MTB2P50ET4
D
2
PAK
800/Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
http://onsemi.com
MTB2P50ET4G
D
2
PAK
(PbFree)
800/Tape & Reel
MARKING DIAGRAM & PIN ASSIGNMENT
4
Drain
T
P50EG
AYWW
2
1
Gate
2
Drain
3
Source
T2P50E = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
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