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參數資料
| 型號： | MTB60N06HDT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/12頁 |
| 文件大小： | 280K |
| 代理商： | MTB60N06HDT4 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
HDTMOS E-FET.
High Energy Power FET
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die
than any existing surface mount package which allows it to be used
in applications that require the use of surface mount components
with higher power and lower RDS(on) capabilities. This advanced
high–cell density HDTMOS power FET is designed to withstand
high energy in the avalanche and commutation modes. This new
energy efficient design also offers a drain–to–source diode with a
fast recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured — Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4
Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
60
Vdc
Drain–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–Source Voltage — Continuous
Gate–Source Voltage — Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current — Continuous
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
60
42.3
180
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TA = 25°C (1)
PD
125
1.0
2.5
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 60 Apk, L = 0.3 mH, RG = 25 )
EAS
540
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient, when mounted with the minimum recommended pad size
R
θJC
R
θJA
R
θJA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
(1) When mounted with the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTB60N06HD/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MTB60N06HD
TMOS POWER FET
60 AMPERES
60 VOLTS
RDS(on) = 0.014 OHM
Motorola Preferred Device
D
S
G
CASE 418B–02, Style 2
D2PAK
Motorola, Inc. 1995
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| MTB60N06HD | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N06HDT4 | 60 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N03HDL | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB75N03HDLT4 | 75 A, 25 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MTB60N06J3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Enhancement Mode Power MOSFET |
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| MTB60N10E7LT4 | 制造商:Motorola Inc 功能描述: |
| MTB60P06H8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
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