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參數資料
| 型號： | MTD1N50E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | IC REG LDO 1.5A ADJ VOLT TO263-5 |
| 中文描述： | 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 267K |
| 代理商： | MTD1N50E |
1
Motorola, Inc. 1995
!
N–Channel Enhancement–Mode Silicon Gate
This high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Robust High Voltage Termination
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Surface Mount Package Available in 16 mm, 13–inch/2500
Unit Tape & Reel, Add –T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
500
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
500
Vdc
— Non–repetitive (tp
≤
10 ms)
±
20
±
40
Vdc
Vpk
Drain Current
— Continuous
— Continuous @ 100
°
C
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
1.0
0.8
3.0
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
Total Power Dissipation @ TA = 25
°
C, when mounted to minimum recommended pad size
PD
40
0.32
1.75
Watts
W/
°
C
Watts
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc, IL = 3.0 Apk, L = 10 mH, RG = 25
)
45
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient, when mounted to minimum recommended pad size
R
θ
JC
R
θ
JA
R
θ
JA
TL
3.13
100
71.4
°
C/W
Maximum Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTD1N50E/D
SEMICONDUCTOR TECHNICAL DATA
D
S
G
CASE 369A–13, Style 2
DPAK
TMOS POWER FET
1.0 AMPERE
500 VOLTS
RDS(on) = 5.0 OHM
Motorola Preferred Device
相關PDF資料 |
PDF描述 |
|---|---|
| MTD1N60E | TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD20N06HD | TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| MTD20N06HDL | TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045 OHM |
| MTD20P03 | TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTD1N60E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM |
| MTD1N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHM |
| MTD1P40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD1P50E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM |
| MTD2001 | 制造商:SHINDENGEN 制造商全稱:Shindengen Electric Mfg.Co.Ltd 功能描述:Stepping Motor Driver ICs |
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