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參數(shù)資料
| 型號(hào)： | MTD20N06HD1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369D-01, DPAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 121K |
| 代理商： | MTD20N06HD1 |
Semiconductor Components Industries, LLC, 2003
August, 2003 Rev. 4
1
Publication Order Number:
MTD20N06HD/D
MTD20N06HD
Preferred Device
Power MOSFET
20 Amps, 60 Volts
NChannel DPAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DrainSource Voltage
VDSS
60
Vdc
DrainGate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
GateSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 30
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100
°C
Drain Current Single Pulse (tp ≤ 10 s)
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TA = 25°C
(Note 2)
PD
40
0.32
1.75
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 20 Apk, L = 0.3 mH, RG = 25 )
EAS
60
mJ
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1)
Junction to Ambient (Note 2)
RθJC
RθJA
3.13
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10
seconds
TL
260
°C
1
When surface mounted to an FR4 board using the minimum
recommended pad size.
2
When surface mounted to an FR4 board using the 0.5 sq.in. drain pad size.
NChannel
D
S
G
Preferred devices are recommended choices for future use
and best overall value.
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
Style 2
MARKING DIAGRAMS
20N06HD Device Code
Y
= Year
WW
= Work Week
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
1
2
3
4
Device
Package
Shipping
ORDERING INFORMATION
MTD20N06HD
DPAK
75 Units/Rail
MTD20N06HD1
DPAK
Straight Lead
75 Units/Rail
MTD20N06HDT4
DPAK
2500 Tape & Reel
http://onsemi.com
YWW
20N
06HD
YWW
20N
06HD
60 V
35 m
W@10 V
RDS(on) TYP
20 A
(Note 1)
ID MAX
V(BR)DSS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N06HD-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts N−Channel DPAK |
| MTD20N06HDL | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK Rail 制造商:ON Semiconductor 功能描述:MOSFET N LOGIC D-PAK |
| MTD20N06HDLT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
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