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參數資料
| 型號： | MTD5P06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 5 AMPERES 60 VOLTS RDS(on) = 0.450 OHM |
| 中文描述： | 5 A, 60 V, 0.45 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 1/10頁 |
| 文件大小： | 245K |
| 代理商： | MTD5P06V |
1
Motorola, Inc. 1996
P–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resis-
tance area product about one–half that of standard MOSFETs. This
new technology more than doubles the present cell density of our
50 and 60 volt TMOS devices. Just as with our TMOS E–FET
designs, TMOS V is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and
power motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against
unexpected voltage transients.
New Features of TMOS V
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETS
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and TMOS E–FET
Surface Mount Package Available in 16 mm, 13–inch/2500 Unit Tape & Reel,
Add –T4 Suffix to Part Number
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage
— Non–repetitive (tp
≤
10 ms)
Drain Current — Continuous @ 25
°
C
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation @ 25
°
C
Total Power Dissipation @ TA = 25
°
C (1)
Operating and Storage Temperature Range
60
Vdc
±
15
±
25
Vdc
Vpk
5
4
18
Adc
Apk
40
2.1
Watts
Watts
Derate above 25
°
C
0.27
W/
°
C
TJ, Tstg
EAS
–55 to 175
°
C
mJ
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 5 Apk, L = 10 mH, RG = 25
)
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
Thermal Resistance
— Junction to Ambient (1)
125
R
θ
JC
R
θ
JA
R
θ
JA
TL
3.75
100
71.4
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET, Designer’s and TMOS V are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MTD5P06V/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
5 AMPERES
60 VOLTS
RDS(on) = 0.450 OHM
Motorola Preferred Device
D
S
G
TM
CASE 369A–13, Style 2
DPAK Surface Mount
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| MTD6N15 | TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MTD5P06V_03 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 5 Amps, 60 Volts P−Channel DPAK |
| MTD5P06V1 | 制造商:ON Semiconductor 功能描述:POWER MOSFET 5 AMPS, 60 VOLTS P-CHANNEL DPAK 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD5P06VT4 | 功能描述:MOSFET 60V 5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD5P06VT4G | 功能描述:MOSFET PFET DPAK 60V 5A 450mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD5P06VT4G | 制造商:ON Semiconductor 功能描述:MOSFET |
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