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參數(shù)資料
| 型號(hào)： | MTDF1C02HDR2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MICROPAK-8 |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 166K |
| 代理商： | MTDF1C02HDR2 |
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Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
MTDF1C02HD/D
MTDF1C02HD
Preferred Device
Power MOSFET
1 Amp, 20 Volts
Complementary Micro8
t
These Power MOSFET devices are capable of withstanding high
energy in the avalanche and commutation modes and the drain–to–source
diode has a very low reverse recovery time. Micro8 devices are designed
for use in low voltage, high speed switching applications where power
efficiency is important. Typical applications are dc–dc converters, and
power management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be used
for low voltage motor controls in mass storage products such as disk
drives and tape drives. The avalanche energy is specified to eliminate the
guesswork in designs where inductive loads are switched and offer
additional safety margin against unexpected voltage transients.
Miniature Micro8 Surface Mount Package – Saves Board Space
Extremely Low Profile (<1.1mm) for thin applications such as
PCMCIA cards
Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery
Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Mounting Information for Micro8 Package Provided
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Negative sign for P–Channel devices omitted for clarity
Rating
Symbol
Max
Unit
Drain–to–Source Voltage
N–Channel
P–Channel
VDSS
20
V
Drain–to–Gate Voltage (RGS = 1.0 MW)
N–Channel
P–Channel
VDGR
20
V
Gate–to–Source Voltage – Continuous
N–Channel
P–Channel
VGS
±8.0
V
Operating and Storage Temperature Range
TJ and
Tstg
–55 to
150
°C
1 AMPERE, 20 VOLTS
RDS(on) = 120 mW (N–Channel)
1 AMPERE, 20 VOLTS
RDS(on) = 175 mW (P–Channel)
1
8
Device
Package
Shipping
ORDERING INFORMATION
MTDF1C02HDR2
Micro8
4000 Tape & Reel
Micro8
CASE 846A
STYLE 2
http://onsemi.com
CA
MARKING
DIAGRAM
WW
= Date Code
Source–1
1
2
3
4
8
7
6
5
Top View
Gate–1
Source–2
Gate–2
Drain–1
Drain–2
PIN ASSIGNMENT
Preferred devices are recommended choices for future use
and best overall value.
D
S
G
P–Channel
D
S
G
N–Channel
56
4
3
78
2
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTDF1N02HDR2 | 1700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1N03HDR2 | 2000 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1N03HDR2 | 1900 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF1P02HDR2 | 1600 mA, 20 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MTDF2N06HDR2 | 1500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTDF1N02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.7 AMPERES 20 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 2.0 AMPERES 30 VOLTS RDS(on) = 0.120 OHM |
| MTDF1N03HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTDF1P02HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 1.6 AMPERES 20 VOLTS RDS(on) = 175 mOHM |
| MTDF2N06HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: |
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