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參數資料
| 型號： | MTP1302 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm |
| 中文描述： | 40 A, 30 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數： | 1/8頁 |
| 文件大小： | 166K |
| 代理商： | MTP1302 |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced high cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. This new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating area are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode Is Characterized for Use In Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
Value
30
30
±
20
±
20
42
20
126
74
0.592
Unit
Vdc
Vdc
Vdc
Vpk
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
— Non–Repetitive (tp
≤
10 ms)
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
Total Power Dissipation
Derate above 25
°
C
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 42 Apk, L = 0.25 mH, RG = 25
)
Thermal Resistance
Junction to Case
Junction–to–Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from Case for 5 seconds
Adc
Apk
Watts
W/
°
C
°
C
mJ
TJ, Tstg
EAS
– 55 to 150
220
R
θ
JC
R
θ
JA
TL
1.67
62.5
260
°
C/W
°
C
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Order this document
by MTP1302/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A–06
TO–220AB
TMOS POWER FET
42 AMPERES
30 VOLTS
RDS(on) = 22 m
相關PDF資料 |
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|---|---|
| MTP1306 | TMOS POWER FET 75 AMPERES 30 VOLTS RDS(on) = 0.0065 OHM |
| MTP15N06V | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.12 OHM |
| MTV32N20E | TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM |
| MTW16N40E | TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM |
| MTW20N50E | TMOS POWER FET 20 AMPERES 500 VOLTS RDS(on) = 0.24 OHM |
相關代理商/技術參數 |
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| MTP150 | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 150A |
| MTP156K00691D | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Wet Tantalum Capacitors Subminiature, Axial Leads |
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