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參數(shù)資料
型號: MTP20N15E
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Power MOSFET 20 Amps, 150 Volts N-Channel TO-220
中文描述: 20 A, 150 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: CASE 221A-09, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 49K
代理商: MTP20N15E
Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 0
1
Publication Order Number:
MTP20N15E/D
MTP20N15E
Preferred Device
Power MOSFET
20 Amps, 150 Volts
N–Channel TO–220
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain–to–source diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power converters
and PWM motor controls, these devices are particularly well suited for
bridge circuits where diode speed and commutating safe operating
areas are critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
150
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
10 ms)
150
Vdc
VGS
VGSM
±
20
±
32
Vdc
Drain – Continuous
– Continuous @ 100
°
C
– Single Pulse (tp
10
μ
s)
ID
ID
IDM
20
12
60
Adc
Total Power Dissipation
Derate above 25
°
C
PD
112
0.9
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
–55 to
150
°
C
Single Drain–to–Source Avalanche Energy
– Starting TJ = 25
°
C
(VDD = 120 Vdc, VGS = 10 Vdc,
IL = 20 Apk, L = 0.3 mH)
Thermal Resistance
– Junction to Case
– Junction to Ambient
EAS
60
mJ
R
θ
JC
R
θ
JA
TL
1.1
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
from case for 10 seconds
260
°
C
20 AMPERES
150 VOLTS
RDS(on) = 130 m
Preferred
devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MTP20N15E
TO–220AB
50 Units/Rail
TO–220AB
CASE 221A
STYLE 5
12
3
4
http://onsemi.com
N–Channel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTP20N15E
LL
Y
WW
= Device Code
= Location Code
= Year
= Work Week
MTP20N15E
LLYWW
1
Gate
3
Source
2
Drain
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