- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371153 > MTW45N10 (Motorola, Inc.) TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM PDF資料下載
參數(shù)資料
| 型號： | MTW45N10 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| 中文描述： | TMOS是45安培，功率場效應(yīng)晶體管100伏特的RDS（on）\u003d 0.035歐姆 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 155K |
| 代理商： | MTW45N10 |
1
Motorola, Inc. 1996
"'# % #!$$%"#
'% $" %"&!%! "
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
VGSM
100
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
100
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
45
34.6
135
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
180
1.44
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 45 Apk, L = 0.8 mH, RG = 25
)
810
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
0.70
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTW45N10E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
45 AMPERES
100 VOLTS
RDS(on) = 0.035 OHM
CASE 340K–01, Style 1
TO–247AE
Motorola Preferred Device
D
S
G
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| MTY14N100 | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
| MTY25N60E | TMOS POWER FET 25 AMPERES 600 VOLTS RDS(on) = 0.21 OHM |
| MTY30N50 | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
| MTY30N50E | TMOS POWER FET 30 AMPERES 500 VOLTS RDS(on) = 0.15 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTW45N10E | 制造商:Rochester Electronics LLC 功能描述: |
| MTW4N80 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTW4N80E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS E-FET POWER FIELD EFFECT TRANSISITOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTW54N05E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:High Energy in the Avalanche and Commutation modes |
| MTW6051212 | 制造商:TDK-Lambda Corporation 功能描述:AC/DC PS TRIPLE-OUT 5V/12V/-12V 5A/2.5A/0.5A 60W - Bulk 制造商:TDK 功能描述:AC/DC CONVERT 5V +/-12V 60W |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。