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參數資料
| 型號： | MUN5111 |
| 廠商： | WEITRON INTERNATIONAL CO., LTD. |
| 英文描述： | Bias Resistor Transistor PNP Silicon |
| 中文描述： | 偏置電阻晶體管進步黨硅 |
| 文件頁數： | 1/6頁 |
| 文件大小： | 89K |
| 代理商： | MUN5111 |
Bias Resistor Transistor
PNP Silicon
Collector-Emitter Voltage
Symbol
VCEO
Value
50
Unit
Vdc
Vdc
Rating
IC
VCBO
50
mAdc
Collector Current-Continuous
100
MUN5111 Series
h t t p : / / w w w . w e i t r o n . c o m . t w
W E I T R O N
Maximum Ratings
( T
A
=25 C unless otherwise noted)
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient
Junction and Storage, Temperature Range
Characteristics
TJ,Tstg
R JA
θ
PD
Symbol
Max
Unit
mW
mW/ C
C/W
C
Thermal Characteristics
Device Marking and Resistor Values
Device
Marking
(1)
202(1)
310
1.6
2.5
(2)
(1)
(2)
618
403
-55 to +150
Collector-Base Voltage
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 1.0 inch Pad
l
l
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
R1(K)
R2(K)
6A
6B
6C
6D
6E
6F
6G
10
22
47
10
10
4.7
1.0
10
22
47
47
8
8
1.0
Device
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
Marking
R1(K)
R2(K)
6H
6J
6K
6L
6M
6N
6P
2.2
4.7
4.7
22
2.2
100
47
22
2.2
4.7
47
47
47
100
SOT-323(SC-70)
1
2
3
R1
R2
EMITTER
COLLECTOR
3
BASE
1
2
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| MUN5112 | Bias Resistor Transistor PNP Silicon |
| MUN5216DW | Surface Mount Dual Bias Resistor Transistor NPN Silicon |
| MUN5212DW | Surface Mount Dual Bias Resistor Transistor NPN Silicon |
| MUN5213DW | Surface Mount Dual Bias Resistor Transistor NPN Silicon |
| MUN5214DW | Surface Mount Dual Bias Resistor Transistor NPN Silicon |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN5111DW | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Bias Resistor Transistors |
| MUN5111DW_09 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor |
| MUN5111DW1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual PNP Bias Resistor Transistors |
| MUN5111DW1T1 | 功能描述:開關晶體管 - 偏壓電阻器 100mA 50V BRT Dual RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發射極最大電壓 VCEO:50 V 集電極連續電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5111DW1T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Dual Bias Resistor Transistors |
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