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| 型號(hào)： | MUN5135T3 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 1/16頁(yè) |
| 文件大小： | 136K |
| 代理商： | MUN5135T3 |
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Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 4
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 Series
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
mW
°C/W
Thermal Resistance –
Junction-to-Ambient
RθJA
618 (Note 1.)
403 (Note 2.)
°C/W
Thermal Resistance –
Junction-to-Lead
RθJL
280 (Note 1.)
332 (Note 2.)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
http://onsemi.com
PNP SILICON
BIAS RESISTOR
TRANSISTORS
SC–70/SOT–323
CASE 419
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
3
2
1
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R1
R2
MARKING DIAGRAM
6x = Specific Device Code
x
= (See Marking Table)
M = Date Code
6x M
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5136 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5136DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5136DW1T1 | 功能描述:TRANS BRT PNP DUAL 50V SOT363 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 陣列﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:1 個(gè) NPN，1 個(gè) PNP - 預(yù)偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應(yīng)商設(shè)備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046 |
| MUN5136DW1T1G | 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel |
| MUN5136T1 | 功能描述:TRANS BRT PNP 100MA 50V SOT-323 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路﹐預(yù)偏壓式 系列:- 標(biāo)準(zhǔn)包裝:10,000 系列:- 晶體管類型:NPN - 預(yù)偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發(fā)射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發(fā)射極 (R2)（歐）:47k 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉(zhuǎn)換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應(yīng)商設(shè)備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
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