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參數資料
| 型號： | MUN5135T3 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-70, 3 PIN |
| 文件頁數： | 1/12頁 |
| 文件大小： | 196K |
| 代理商： | MUN5135T3 |
Semiconductor Components Industries, LLC, 2000
May, 2000 – Rev. 3
1
Publication Order Number:
MUN5111T1/D
MUN5111T1 SERIES
Preferred Devices
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC–70/SOT–323 package which is designed for low power surface
mount applications.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC–70/SOT–323 package can be soldered using
wave or reflow. The modified gull–winged leads absorb
thermal stress during soldering eliminating the possibility
of damage to the die.
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
Collector Current
IC
100
mAdc
Total Power Dissipation
@ TA = 25°C (1.)
Derate above 25
°C
PD
150
1.2
mW
mW/
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
MUN5111T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1 (2.)
MUN5116T1 (2.)
MUN5130T1 (2.)
MUN5131T1 (2.)
MUN5132T1 (2.)
MUN5133T1 (2.)
MUN5134T1 (2.)
MUN5135T1 (2.)
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
6M
10
22
47
10
4.7
1.0
2.2
4.7
22
2.2
10
22
47
∞
1.0
2.2
4.7
47
3000/Tape & Reel
1. Device mounted on a FR–4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
http://onsemi.com
CASE 419
SC–70/SOT–323
STYLE 3
Preferred devices are recommended choices for future use
and best overall value.
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
2
1
PIN3
COLLECTOR
(OUTPUT)
PIN2
EMITTER
(GROUND)
PIN1
BASE
(INPUT)
R1
R2
相關PDF資料 |
PDF描述 |
|---|---|
| MUN5114T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5111T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5131T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5115T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| MUN5112T3 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MUN5136 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Bias Resistor Transistor PNP Silicon |
| MUN5136DW | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Dual Bias Resistor Transistor PNP Silicon |
| MUN5136DW1T1 | 功能描述:TRANS BRT PNP DUAL 50V SOT363 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 陣列﹐預偏壓式 系列:- 標準包裝:3,000 系列:- 晶體管類型:1 個 NPN，1 個 PNP - 預偏壓式（雙） 電流 - 集電極 (Ic)（最大）:70mA，100mA 電壓 - 集電極發射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k，2.2k 電阻器 - 發射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz，200MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:6-TSSOP，SC-88，SOT-363 供應商設備封裝:PG-SOT363-6 包裝:帶卷 (TR) 其它名稱:SP000784046 |
| MUN5136DW1T1G | 制造商:ON Semiconductor 功能描述:SS SC88 BR XSTR PNP 50V - Tape and Reel |
| MUN5136T1 | 功能描述:TRANS BRT PNP 100MA 50V SOT-323 RoHS:否 類別:分離式半導體產品 >> 晶體管(BJT) - 單路﹐預偏壓式 系列:- 標準包裝:10,000 系列:- 晶體管類型:NPN - 預偏壓 電流 - 集電極 (Ic)（最大）:100mA 電壓 - 集電極發射極擊穿（最大）:50V 電阻器 - 基極 (R1)（歐）:47k 電阻器 - 發射極 (R2)（歐）:47k 在某 Ic、Vce 時的最小直流電流增益 (hFE):70 @ 5mA，5V Ib、Ic條件下的Vce飽和度（最大）:300mV @ 500µA，10mA 電流 - 集電極截止（最大）:- 頻率 - 轉換:100MHz 功率 - 最大:250mW 安裝類型:表面貼裝 封裝/外殼:SC-70，SOT-323 供應商設備封裝:PG-SOT323-3 包裝:帶卷 (TR) 其它名稱:SP000756242 |
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