
SENSITRON
SEMICONDUCTOR
Technical Data
Data Sheet 4855, Rev.-
221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com
E-Mail Address - sales@sensitron.com
MURC405-MURC460
MURC405-MURC460
Ultrafast Silicon Die
Applications:
Switching Power Supply
General Purpose
Free-Wheeling Diodes
Polarity Protection
Diode
Features:
Glass-Passivated
Epitaxial Construction.
Low Reverse Leakage Current
High Surge Current Capability
Low Forward Voltage Drop
Fast Reverse-Recovery Behavior
Maximum Ratings:
Characteristics
Symbol
MURC
405
50
MURC
410
100
MURC
415
150
MURC
420
200
MURC
440
400
MURC
460
600
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward
Current(Square Wave)
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions, half
wave, single phase, 60Hz)
V
RRM
V
RWM
V
R
I
F(AV)
V
4.0 @ T
A
= 80
°
C
4.0 @ T
A
= 40
°
C
A
I
FSM
125
110
A
Max. Junction Capacitance @V
R
= 5V,
T
C
= 25
°
C, f
SIG
= 1MHz, V
SIG
= 50mV (p-p)
Operating JunctionTemperature and Storage
Temperature
Electrical Characteristics:
Characteristics
C
T
100
40
pF
T
J,
T
stg
-65 to +175
°
C
Symbol
MURC
405
MURC
410
MURC
415
MURC
420
MURC
440
MURC
460
Unit
Max. Instantaneous Forward Voltage (Note1)
(I
F
= 3.0 Amp, T
J
= 150
°
C)
(I
F
= 3.0 Amp, T
J
= 25
°
C)
(I
F
= 4.0 Amp, T
J
= 25
°
C)
Max. Instantaneous Reverse Current (Note1)
(Rated DC Voltage, T
J
= 150
°
C)
(Rated DC Voltage, T
J
= 25
°
C)
Max. Reverse Recovery Time
(I
F
= 1.0 Amp, di/dt = 50 A/
μ
s)
(I
F
= 0.5 Amp, I
R
= 1.0 A, I
REC
=0.25A)
Max. Forward Recovery Time
(I
F
= 1.0 Amp, di/dt = 100 A/
μ
s,
Recover to 1.0 V)
V
F
0.71
0.88
0.89
150
5
35
25
25
1.05
1.25
1.28
250
10
75
50
50
V
I
R
μ
A
nS
t
rr
T
fr
nS
1. Pulse Test: Pulse Width = 300μs, Duty Cycle
≤
2%