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參數資料
型號: MURF1660CT
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifier(開關模式功率整流管)
中文描述: 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: PLASTIC, CASE 221D-03, ISOLATED TO-220, FULL PACK-3
文件頁數: 1/4頁
文件大小: 111K
代理商: MURF1660CT
Semiconductor Components Industries, LLC, 2006
April, 2006
Rev. 4
1
Publication Order Number:
MURF1660CT/D
MURF1660CT
Preferred Device
SWITCHMODE
Power Rectifier
These state
of
the
art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
Ultrafast 60 Nanosecond Recovery Times
150
°
C Operating Junction Temperature
Epoxy Meets UL 94 V
0 @ 0.125 in
High Temperature Glass Passivated Junction
Low Leakage Specified @ 150
°
C Case Temperature
Current Derating @ Both Case and Ambient Temperatures
Electrically Isolated. No Isolation Hardware Required.
UL Recognized File #E69369 (Note 1)
Pb
Free Package is Available*
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes: 260
°
C Max. for 10 Seconds
MAXIMUM RATINGS
(Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
I
F(AV)
600
V
Average Rectified Forward Current
Total Device, (Rated V
R
), T
C
= 150
°
C
Per Diode
Per Device
8
16
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz),
T
C
= 150
°
C
Non
repetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
FM
16
A
I
FSM
100
A
Operating Junction and Storage Temperature
T
J
, T
stg
V
iso1
65 to +150
°
C
RMS Isolation Voltage
(t = 1 second, R.H.
30%, T
A
= 25
°
C)
(Note 2)
Per Figure 3
Per Figure 4 (Note 1)
Per Figure 5
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. UL Recognized mounting method is per Figure 4
2. Proper strike and creepage distance must be provided.
V
iso2
V
iso3
4500
3500
1500
V
*For additional information on our Pb
Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
Package
Shipping
ORDERING INFORMATION
MURF1660CT
TO
220
50 Units/Rail
ULTRAFAST RECTIFIER
16 AMPERES, 600 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
2
1
3
MURF1660CTG
TO
220
(Pb
Free)
50 Units/Rail
http://onsemi.com
ISOLATED TO
220
CASE 221D
STYLE 3
3
12
MARKING
DIAGRAM
A
Y
WW
U1660
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb
Free Package
= Diode Polarity
AYWW
U1660G
A K A
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相關代理商/技術參數
參數描述
MURF1660CT C0 制造商:SKMI/Taiwan 功能描述:Diode Switching 600V 16A 3-Pin(3+Tab) ITO-220AB Tube
MURF1660CT/D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SWITCHMODE? Power Rectifier
MURF1660CT_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:ULTRAFAST RECTIFIER 16 AMPERES, 600 VOLTS
MURF1660CT_07 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:SWITCHMODE Power Rectifier
MURF1660CTG 功能描述:整流器 200V 16A Ultrafast RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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