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參數資料
型號: MVUPR15E3
廠商: MICROSEMI CORP
元件分類: 整流器
英文描述: 2.5 A, SILICON, RECTIFIER DIODE, DO-216AA
封裝: ROHS COMPLIANT, PLASTIC, POWERMITE-2
文件頁數: 1/2頁
文件大小: 116K
代理商: MVUPR15E3
UPR5e3, UPR10e3, UPR15e3
2.5 Amp High Efficiency Ultrafast Rectifier
DESCRIPTION
The Microsemi UPR5e3, UPR10e3, and UPR15e3 Powermite
high
efficiency rectifiers are RoHS compliant and offers optimized forward
voltage characteristics with reverse blocking capabilities up to 150 Volts.
They are ideal for surface mount applications that operate at high
frequencies.
In addition to its size advantages, Powermite
package features include a
full metallic bottom that eliminates possibility of solder flux entrapment
during assembly and a unique locking tab acts as an efficient heat path
from die to mounting plane for external heat sinking with very low thermal
resistance junction to case (bottom). Its innovative design makes this
device ideal for use with automatic insertion equipment.
IMPORTANT: Forthemostcurrentdata,consultMICROSEMI’s website: http://www.microsemi.com
ABSOLUTE MAXIMUM RATINGS AT 25 C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Working Peak Reverse Voltage UPR5e3
Working Peak Reverse Voltage UPR10e3
Working Peak Reverse Voltage UPR15e3
VRWM
50
100
150
V
Average Rectified Output Current (at rated
VRWM, TC =75C)
Io
2.5
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half-sine wave
IFSM
25
A
Storage Temperature
TSTG
-55 to +150
C
Junction Temperature
TJ
-55 to +150
C
DO-216
See further details and dimensions on last page
THERMAL CHARACTERISTICS
(UNLESS OTHERWISE SPECIFIED)
Thermal Resistance
Junction-to-case (bottom)
RθJC
10
C/ Watt
Junction-to-ambient (1)
RθJA
240
C/ Watt
(1) When mounted on FR-4 PC board using 1 oz copper with recommended minimum foot print
KEY FEATUR ES
Low thermal resistance DO-216 package for
higher current operation
Utrasfast recovery time of 25 ns
RoHS Compliant with e3 suffix part number
Efficient heat path with Integral locking
bottom metal tab
Low forward voltage
Full metallic bottom eliminates flux
entrapment
Compatible with automatic insertion
Low profile-maximum height of 1mm
Options for screening in accordance with
MIL-PRF-19500 for JAN, JANTX, and
JANTXV are available by adding MQ, MX, or
MV prefixes respectively to part numbers.
For example, designate MXUPR5e3 for a
JANTX (consult factory for Tin-Lead plating).
Optional 100% avionics screening available
by adding MA prefix for 100% temperature
cycle, thermal impedance and 24 hours
HTRB (consult factory for Tin-Lead plating)
APPLICATIONS/BENEFITS
Switching and Regulating Power Supplies.
Charge Pump Circuits
Reduces reverse recovery loss with low IRM
Small 8.45 mm
2 foot print
(See mounting pad details next page)
MECHANICAL & PACKAGING
CASE: Void-free transfer molded
thermosetting epoxy compound meeting
UL94V-0
FINISH: Annealed matte-Tin plating over
copper and readily solderable per MIL-
STD-750 method 2026 (consult factory for
Tin-Lead plating)
POLARITY: See figure (left)
MARKING: UPR5e3:
R05
UPR10e3: R10
UPR15e3: R15
WEIGHT: 0.016 grams (approx.)
Package dimension on last page
Tape & Reel option: 12 mm tape per
Standard EIA-481-B, 3000 on 7 inch reel
and 12,000 on 13” reel
WWW
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Microsemi
Copyright
2007
6-26-2007 Rev B
Page 1
相關PDF資料
PDF描述
MR2402FR-BS01P 24 A, 50 V, SILICON, RECTIFIER DIODE
MR851 3 A, SILICON, RECTIFIER DIODE
MSARS50S20YS-1 50 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA
MSARS50S20YRV-1 50 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA
MSARS50S20YRV 50 A, 200 V, SILICON, RECTIFIER DIODE, DO-217AA
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