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參數資料
| 型號： | MWI100-12E8 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Modules |
| 中文描述： | 165 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | SIXPACK-19 |
| 文件頁數： | 1/2頁 |
| 文件大小： | 71K |
| 代理商： | MWI100-12E8 |
2001 IXYS All rights reserved
1 - 2
B3
IXYS reserves the right to change limits, test conditions and dimensions.
1
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
165
115
A
A
RBSOA
V
=
±
15 V; R
= 10
; T
= 125°C
Clamped inductive load; L = 100 μH
I
CM
= 200
V
CEK
≤
V
CES
A
t
(SCSOA)
V
= 900 V; V
GE
=
±
15 V; R
G
= 10
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
640
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 100 A; V
GE
= 15 V; T
VJ
= 25°C
2.0
2.2
2.5
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
1.4
mA
mA
1.4
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
400
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
150
60
680
50
12
10
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 100 A
7.4
nF
μC
1
R
thJC
(per IGBT)
0.19 K/W
Inductive load, T
= 125°C
V
CE
= 600 V; I
C
= 100 A
V
GE
= ±15 V; R
G
= 10
I
C25
V
CES
V
CE(sat) typ.
= 2.0 V
= 165 A
= 1200 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
Advanced Technical Information
MWI 100-12 E8
Features
IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current for optimized
performance also in resonant circuits
HiPerFRED
TM
diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
Typical Applications
AC drives
power supplies with power factor
correction
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
15
19
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相關代理商/技術參數 |
參數描述 |
|---|---|
| MWI100-12T8T | 功能描述:分立半導體模塊 100 Amps 1200V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI150-06A | 制造商:n/a 功能描述:IGBT Module |
| MWI150-06A8 | 功能描述:分立半導體模塊 150 Amps 600V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI150-06A8T | 功能描述:分立半導體模塊 150 Amps 600V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI150-12T8T | 功能描述:分立半導體模塊 150 Amps 1200V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
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