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參數(shù)資料
| 型號(hào)： | MWI75-12E8 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Modules |
| 中文描述： | 130 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-19 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 145K |
| 代理商： | MWI75-12E8 |
2004 IXYS All rights reserved
1 - 2
MWI 75-12 A8
4
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT IGBT technology
low saturation voltage
low switching losses
switching frequency up to 30 kHz
square RBSOA, no latch up
high short circuit capability
positive temperature coefficient for
easy parallelling
MOS input, voltage controlled
ultra fast free wheeling diodes
solderable pins for PCB mounting
package with copper base plate
Advantages
space savings
reduced protection circuits
package designed for wave soldering
Typical Applications
AC motor control
AC servo and robot drives
power supplies
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C
1200
V
V
GES
±
20
V
I
C25
I
C80
T
C
= 25°C
T
C
= 80°C
125
85
A
A
RBSOA
V
=
±
15 V; R
= 15
; T
= 125°C
Clamped inductive load; L = 100 μH
I
CM
= 150
V
CEK
≤
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 15
; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
500
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 75 A; V
GE
= 15 V; T
VJ
= 25°C
2.2
2.5
2.6
V
V
T
VJ
= 125°C
V
GE(th)
I
C
= 3 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C
T
VJ
= 125°C
5
mA
mA
3
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
400
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
100
50
650
50
12.1
10.5
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 75 A
5.5
350
nF
nC
R
thJC
(per IGBT)
0.25 K/W
Inductive load, T
= 125°C
V
CE
= 600 V; I
C
= 75 A
V
GE
= ±15 V; R
G
= 15
I
C25
V
CES
V
CE(sat) typ.
= 2.2 V
= 125 A
= 1200 V
IGBT Modules
Sixpack
Short Circuit SOA Capability
Square RBSOA
13, 21
14, 20
1
2
3
4
7
8
9
10
11
12
5
6
17
15
19
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