- 您現在的位置：買賣IC網 > PDF目錄382355 > MWI75-12E8 (IXYS CORP) IGBT Modules PDF資料下載
參數資料
| 型號： | MWI75-12E8 |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | IGBT Modules |
| 中文描述： | 130 A, 1200 V, N-CHANNEL IGBT |
| 封裝： | MODULE-19 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 145K |
| 代理商： | MWI75-12E8 |
2004 IXYS All rights reserved
2 - 2
MWI 75-12 A8
4
IXYS reserves the right to change limits, test conditions and dimensions.
Module
Symbol
Conditions
Maximum Ratings
T
VJ
T
JM
T
stg
operating
-40...+125
+150
-40...+125
°
C
°
C
°
C
V
ISOL
I
ISOL
≤
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
3 - 6
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
1.8
m
d
S
d
A
Creepage distance on surface
Strike distance in air
10
10
mm
mm
R
thCH
with heatsink compound
0.01
K/W
Weight
300
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25°C
T
C
= 80°C
150
100
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 75 A; V
GE
= 0 V; T
VJ
= 25°C
2.2
1.6
2.6
V
V
T
VJ
= 125°C
I
RM
t
rr
I
F
= 75 A; di
/dt = -750 A/μs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
79
220
A
ns
R
thJC
(per diode)
0.41 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 13.5 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 4 m
Thermal Response
IGBT (typ.)
C
th1
= 0.295 J/K; R
th1
= 0.186 K/W
C
th2
= 1.750 J/K; R
th2
= 0.064 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.227 J/K; R
th1
= 0.321 K/W
C
th2
= 1.328 J/K; R
th2
= 0.089 K/W
Dimensions in mm (1 mm = 0.0394")
相關PDF資料 |
PDF描述 |
|---|---|
| MWI80-12T6K | IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA |
| MX-1616 | HIGH SPEED CMOS PROGRAMMABLE ANALOG MULTIPLEXERS |
| MX-1616C | HIGH SPEED CMOS PROGRAMMABLE ANALOG MULTIPLEXERS |
| MX-818 | HIGH SPEED CMOS PROGRAMMABLE ANALOG MULTIPLEXERS |
| MX-818C | HIGH SPEED CMOS PROGRAMMABLE ANALOG MULTIPLEXERS |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MWI75-12T7T | 功能描述:分立半導體模塊 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI75-12T8T | 功能描述:分立半導體模塊 75 Amps 1200V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWI80-12T6K | 功能描述:分立半導體模塊 80 Amps 1200V RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MWIC930 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MWIC930GNR1 | 功能描述:射頻放大器 30W 900MHZ TO272WBGN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數:0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發布緊急采購，3分鐘左右您將得到回復。