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參數資料
| 型號： | MXP1144P |
| 廠商： | Microsemi Corporation |
| 英文描述： | PHOTOVOLTAIC BY-PASS DIODE 50 VOLTS, 1.0 Amps |
| 中文描述： | 光伏旁路二極管50伏特，1.0安培 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MXP1144P |
Microsemi
Santa Ana Division
2830 South Fairview, Santa Ana, CA. 92704, 714-979-8220, Fax: 714-557-5989
Page 1
Copyright
2002
MXP1144.PDF, 2003-08-15
W
M
.
C
MXP1144P
PHOTOVOLTAIC BY-PASS DIODE
50 VOLTS,
1.0 Amps
P
RODUCT
P
REVIEW
SANTA ANA DIVISION
D E S C R I P T I O N
Large area diode chip for medium current photovoltaic by-
pass applications, or for higher current hybrid applications.
The device is rated for 1A for applications where the device
will be exposed to substantial radiation flux (space). For
other applications, it may be operated at higher currents. A
version with attached leads is available.
IMPORTANT:
For the most current data, consult
MICROSEMI
’s website:
http://www.microsemi.com
K E Y F E A T U R E S
Oxide passivated structure for
very low leakage currents
Epitaxial structure minimizes
forward voltage drop
Triangular shape to fit in corner
near flat of photovoltaic cell
Forward voltage decreases with
radiation exposure
Targeted for terrestrial
applications with silicon
photovoltaic cells
Thin construction for fit with
photovoltaic cells
APPLICAT IONS /BENEFIT S
Increases efficiency of
photovoltaic arrays
Protects photovoltaic cells from
reverse voltage
MA X IMU M R A T IN G S @ 2 5
°
C ( U N L E S S O T H E R W IS E S P E C IF IE D )
DESCRIPTION
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, Tc
≤
135
°
C
Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RWM
V
R
I
F(ave)
T
j
T
stg
MAX.
50
50
50
1.0
-65 to +150
-65 to +200
UNIT
Volts
Volts
Volts
Amps
°
C
°
C
E L E C T R IC A L P A R A ME T E R S
SYMBOL
IR
25
VR= 4 Vdc, Ta= 25
°
C
IR
25
VR= 50 Vdc, Ta= 25
°
C
VF1
IF= 400 mA, Ta= 25
°
C
VF2
IF= 1.0 A, Ta= 25
°
C
Cj1
VR= 4 Vdc
BVR
IR= 200
μ
A, Ta= 25
°
C
DESCRIPTION
Current (in dark)
Forward Voltage
pulse test, pw= 300
μ
s
Junction Capacitance
Breakdown Voltage
CONDITIONS
MIN
50
TYP.
10
20
750
770
1050
60
MAX
200
775
800
1300
UNIT
nA
nA
mV
mV
pF
V
Reverse (Leakage)
M
X
P
1
1
4
4
P
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