- 您現在的位置：買賣IC網 > PDF目錄361075 > NAND512R4M2CZB5E (意法半導體) 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP PDF資料下載
參數資料
| 型號： | NAND512R4M2CZB5E |
| 廠商： | 意法半導體 |
| 元件分類： | 存儲器模塊 |
| 英文描述： | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| 中文描述： | 同一封裝內整合了256/512Mb/1Gb（x8/x16，1.8/3V，528字節頁）NAND閃存以及256/512Mb（x16/x32，1.8V的）LPSDRAM的MCP |
| 文件頁數： | 16/23頁 |
| 文件大小： | 181K |
| 代理商： | NAND512R4M2CZB5E |
Maximum rating
NAND256-M, NAND512-M, NAND01G-M
16/23
2
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 5.
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
Min
Max
T
A
Ambient Operating Temperature
-30
85
°C
T
BIAS
Temperature Under Bias
TBD
(1)
1.
TBD stands for To Be Defined.
TBD
(1)
°C
T
STG
Storage Temperature
-55
125
°C
V
IO(2)
2.
Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to V
DD
+ 2V for less than 20ns during transitions on I/O pins.
NAND Flash Input or Output
Voltage
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
LPSDRAM Input or Output
Voltage
1.8V device
-0.5
2.6
V
V
DDF
NAND Flash Supply Voltage
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
V
DDD
, V
DDQD
LPSDRAM Supply Voltage
1.8V device
-0.5
2.6
V
LPSDRAM Short
Circuit Output
Current
I
OS
50
mA
LPSDRAM Power
Dissipation
PD
1.0
W
相關PDF資料 |
PDF描述 |
|---|---|
| NAND512W3M5BZB5F | 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP |
| NAS-xxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| NASxxx | SEMI-PRECISION POWER WIREWOUND RESISTOR |
| NAS1581 | 100 DEG FRUSH REDUCED HEAD BOLT |
| NAS1581-10 | 100 DEG FRUSH REDUCED HEAD BOLT |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NAND512W3A0AN6 | 功能描述:閃存 NAND & S.MEDIA FLASH RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6E | 功能描述:閃存 2.7-3.6V 512M(64Mx8) RoHS:否 制造商:ON Semiconductor 數據總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結構:256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| NAND512W3A0AN6F | 制造商:Micron Technology Inc 功能描述:FLASH PARALLEL 3V/3.3V 512MBIT 64MX8 12US 48TSOP - Tape and Reel |
| NAND512W3A0AV6E | 功能描述:IC FLASH 512MBIT 48WSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:576 系列:- 格式 - 存儲器:閃存 存儲器類型:閃存 - NAND 存儲容量:512M（64M x 8） 速度:- 接口:并聯 電源電壓:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應商設備封裝:48-TSOP 包裝:托盤 其它名稱:497-5040 |
| NAND512W3A2BE06 | 制造商:STMicroelectronics 功能描述:512 MBIT NAND FLASH MEMORY WAFER |
發布緊急采購，3分鐘左右您將得到回復。