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參數資料
| 型號： | NCP1395A |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | High Performance Resonant Mode Controller(高性能諧振模式控制器) |
| 中文描述： | 高性能諧振模式控制器（高性能諧振模式控制器） |
| 文件頁數： | 6/27頁 |
| 文件大小： | 335K |
| 代理商： | NCP1395A |
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NCP1395A/B
http://onsemi.com
6
ELECTRICAL CHARACTERISTICS
(For typical values T
j
= 25
°
C, for min/max values T
j
= 0
°
C to +125
°
C, Max T
J
= 150
°
C,
V
CC
= 11 V, unless otherwise noted.)
Characteristic
Pin
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION
TurnOn Threshold Level, V
CC
Going Up – A Version
12
VCC
ON
12.3
13.3
14.3
V
TurnOn Threshold Level, V
CC
Going Up – B Version
12
VCC
ON
9.3
10.3
11.3
V
Minimum Operating Voltage after TurnOn
12
VCC
(min)
8.3
9.3
10.3
V
Minimum Hysteresis between VCC
ON
and VCC
(min)
A Version
12
VhysteA
3.0
V
Minimum Hysteresis between VCC
ON
and VCC
(min)
B Version
12
VhysteB
1.0
V
Startup Current, V
CC
< VCC
ON
12
Istartup
300
A
V
CC
Level at which the Internal Logic gets Reset
12
VCC
reset
5.9
V
Internal IC Consumption, No Output Load on Pins 11/12, Fsw = 300 kHz
12
ICC1
1.6
mA
Internal IC consumption, 100 pF output load on pin 11 / 12, Fsw
= 300 kHz
12
ICC2
2.3
mA
Consumption in fault mode (All drivers disabled, Vcc > VCC
(min)
)
12
ICC3
1.3
mA
VOLTAGE CONTROL OSCILLATOR (VCO)
Minimum Switching Frequency, Rt = 120 k on Pin 1, Vpin 5 = 0 V,
DT = 300 ns
1
Fsw min
48.5
50
51.5
kHz
Maximum Switching Frequency, Rfmax = 22 k on Pin 2, Vpin 5 >
6.0 V, DT = 300 ns T
j
= 25
°
C (Note 3)
2
Fsw max
0.9
1.0
1.11
MHz
Feedback Pin Swing above which f = 0
5
FBSW
6.0
V
VCO V
CC
Rejection, V
CC
= 1.0 V, in Percentage of Fsw
PSRR
0.2
%/V
Operating Duty Cycle
1110
DC
48
50
52
%
Reference Voltage for all Current Generations (Fosc, DT)
1, 3
VREF
1.86
2.0
2.14
V
Delay before any Driver Restart in Fault Mode
Tdel
20
s
FEEDBACK SECTION
Internal Pulldown Resistor
5
Rfb
20
k
OTA Internal Offset Voltage
16
VREF_FB
2.325
2.5
2.675
V
Voltage on Pin 5 below which the FB Level has no VCO Action
5
Vfb_off
1.3
V
Voltage on Pin 5 below which the Controller Considers a Fault
5
Vfb_fault
0.6
V
Input Bias Current
16
IBias
100
nA
DC Transconductance Gain
15
OTAG
250
S
Gain Product Bandwidth, Rload = 5.0 k
15
GBW
1.0
MHz
DRIVE OUTPUT
Output Voltage Rise Time @ CL = 100 pF, 1090% of Output Signal
1110
T
r
20
ns
Output Voltage FallTime @ CL = 100 pF, 1090% of Output Signal
1110
T
f
20
ns
Source Resistance
1110
R
OH
20
60
120
Sink Resistance
1110
R
OL
30
60
130
Deadtime with R
DT
= 127 k from Pin 3 to GND
3
T_dead
270
300
390
ns
Maximum Deadtime with R
DT
= 540 k from Pin 3 to GND
3
T_deadmax
1.0
s
Minimum Deadtime, R
DT
= 30 k from Pin 3 to GND
3. Room temperature only, please look at characterization data for evolution versus junction temperature.
3
T_deadmin
150
ns
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