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參數(shù)資料
| 型號： | NCP1654BD133R2G |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 4/23頁 |
| 文件大小： | 228K |
| 描述： | IC PFC CCM 133KHZ 8-SOIC |
| 標(biāo)準(zhǔn)包裝： | 2,500 |
| 模式： | 連續(xù)導(dǎo)電（CCM） |
| 頻率 - 開關(guān)： | 120kHz ~ 146kHz |
| 電流 - 啟動： | 75µA |
| 電源電壓： | 9 V ~ 20 V |
| 工作溫度： | -40°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SOICN |
| 包裝： | 帶卷 (TR) |
| 其它名稱： | NCP1654BD133R2G-ND NCP1654BD133R2GOSTR |
NCP1654
http://onsemi.com
4
TYPICAL ELECTRICAL CHARACTERISTICS TABLE (V
CC
= 15 V, T
J
from 40癈 to +125癈, unless otherwise specified) (Note 3)
Symbol
Unit
Max
Typ
Min
Rating
OVERVOLTAGE PROTECTION
V
OVP
/ V
REF
Ratio (Overvoltage Threshold / V
REF
)
103
105
107
%
T
OVP
Propagation Delay (V
FB
107% V
REF
) to Drive Low
500
ns
UNDERVOLTAGE PROTECTION / SHUTDOWN
V
UVP(on)
/V
REF
UVP Activate Threshold Ratio (T
J
= 0癈 to +105癈)
4
8
12
%
V
UVP(off)
/V
REF
UVP Deactivate Threshold Ratio (T
J
= 0癈 to +105癈)
6
12
18
%
V
UVP(H)
UVP Lockout Hysteresis
4
%
T
UVP
Propagation Delay (V
FB
< 8% V
REF
) to Drive Low
500
ns
THERMAL SHUTDOWN
T
SD
Thermal Shutdown Threshold
150
癈
H
SD
Thermal Shutdown Hysteresis
30
癈
V
CC
UNDERVOLTAGE LOCKOUT SECTION
V
CC(on)
StartUp Threshold (Undervoltage Lockout Threshold, V
CC
rising)
9.6
10.5
11.4
V
V
CC(off)
Disable Voltage after TurnOn (Undervoltage Lockout Threshold, V
CC
falling)
8.25
9.0
9.75
V
V
CC(H)
Undervoltage Lockout Hysteresis
1.0
1.5
V
DEVICE CONSUMPTION
I
STUP
I
CC1
I
CC2
I
STDN
Power Supply Current:
StartUp (@ V
CC
= 9.4 V)
Operating (@ V
CC
= 15 V, no load, no switching)
Operating (@ V
CC
= 15 V, no load, switching)
Shutdown Mode (@ V
CC
= 15 V and V
FB
= 0 V)
3.7
4.7
300
75
5.0
6.0
400
mA
mA
mA
mA
3. The above specification gives the targeted values of the parameters. The final specification will be available once the complete circuit charac-
terization has been performed.
NOTE:
I
M
+
I
cs
V
BO
4
V
control
* V
control(min)
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