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參數(shù)資料
| 型號： | NE32484A-SL |
| 廠商： | NEC Corp. |
| 英文描述： | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| 中文描述： | C到Ku波段超低噪聲放大器N溝道黃建忠場效應(yīng)管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 63K |
| 代理商： | NE32484A-SL |
1991
DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE32484A
C to Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
DESCRIPTION
The NE32484A is a Hetero Junction FET that utilizes the
hetero junction to create high mobility electrons. Its excellent
low noise and high associated gain make it suitable for DBS,
TVRO and another commercial systems.
FEATURES
Super Low Noise Figure & High Associated Gain
NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
Gate Length : L
g
≤
0.25
μ
m
Gate Width : W
g
= 200
μ
m
ORDERING INFORMATION
PART NUMBER
SUPPLYING
FORM
LEAD LENGTH
MARKING
NE32484A-SL
STICK
L = 1.7 mm MIN.
NE32484A-T1
Tape & reel
1000 pcs./reel
L = 1.0
±
0.2 mm
T
NE32484A-T1A
Tape & reel
5000 pcs./reel
L = 1.0
±
0.2 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
V
DS
V
GS
I
D
I
G
P
tot
T
ch
T
stg
4.0
–3.0
I
DSS
100
165
150
V
V
mA
μ
A
mW
C
C
–65 to +150
RECOMMENDED OPERATING CONDITION (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
V
DS
2
3
V
Drain Current
I
D
10
20
mA
Input Power
P
in
0
dBm
Document No. P11785EJ3V0DS00 (3rd edition)
(Previous No. TC-2316)
Date Published July 1996 P
Printed in Japan
1.78 ±0.2
1
1
2
L
L
3
4
0.5 TYP.
0
1
0
PACKAGE DIMENSIONS
(Unit: mm)
1.
2.
3.
4.
Source
Drain
Source
Gate
L
L
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NE32484A-T1A | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE32900 | SCHEMATIC |
| NE33200 | SUPER LOW NOISE HJ FET |
| NE33200M | SUPER LOW NOISE HJ FET |
| NE33200N | SUPER LOW NOISE HJ FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NE32484A-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:ULTRA LOW NOISE PSEUDOMORPHIC HJ FET |
| NE32484A-T1A | 制造商:NEC 制造商全稱:NEC 功能描述:C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
| NE32500 | 制造商:CEL 制造商全稱:CEL 功能描述:C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP |
| NE32500M | 制造商:CEL 制造商全稱:CEL 功能描述:C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP |
| NE32500N | 制造商:CEL 制造商全稱:CEL 功能描述:C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP |
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