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參數資料
| 型號： | NE46134 |
| 廠商： | NEC Corp. |
| 英文描述： | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| 中文描述： | 鄰舍npn型中功率微波晶體管 |
| 文件頁數： | 1/10頁 |
| 文件大小： | 137K |
| 代理商： | NE46134 |
NEC's NPN MEDIUM POWER
MICROWAVE TRANSISTOR
NE46100
NE46134
FEATURES
HIGH DYNAMIC RANGE
LOW IM DISTORTION:
-40 dBc
HIGH OUTPUT POWER :
27.5 dBm at TYP
LOW NOISE:
1.5 dB TYP at 500 MHz
LOW COST
PART NUMBER
EIAJ
1
REGISTERED NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE46100
NE46134
2SC4536
00 (CHIP) 34
MIN
TYP
MAX
5.5
1.5
2.0
9.0
SYMBOLS
f
T
NF
MIN
UNITS
GHz
dB
dB
dB
dB
dB
MIN
TYP
5.5
1.5
2.0
MAX
Gain Bandwidth Product at V
CE
= 10 V, I
C
= 100 mA
Minimum Noise Figure
3
at V
CE
= 10 V, I
C
= 50 mA, 500 MHz
V
CE
= 10 V, I
C
= 50 mA, 1 GHz
Linear Gain, V
CE
= 12.5 V, I
C
= 100 mA, 2.0 GHz
V
CE
= 12.5 V, I
C
= 100 mA, 1.0 GHz
Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz
DC Current Gain
2
at V
CE
= 10 V, I
C
= 50 mA
Collector Cutoff Current at V
CB
= 20 V, I
E
= 0 mA .
Emitter Cutoff Current at V
EB
= 2 V, I
C
= 0 mA
Output Power at 1 dB Compression, V
CE
= 12.5 V, I
C
= 100 mA, 2.0 GHz
V
CE
= 12.5 V, I
C
= 100 mA, 1.0 GHz
Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz,
Total P
OUT
= 20 dBm
Thermal Resistance (Junction to Case)
Thermal Resistance (Junction to Ambient)
G
L
8.0
7.0
|S
21E
|
2
h
FE
I
CBO
I
EBO
P
1dB
10.0
5.5
40
40
200
5.0
5.0
200
5.0
5.0
μ
A
μ
A
dBm
dBm
27.0
27.5
IM
3
dBc
°
C/W
°
C/W
-40.0
-40.0
R
TH (J-C)
R
TH (J-A)
30
32.5
312.5
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed: PW
≤
350 ms, Duty Cycle
≤
2%
3. RS = RL = 50
untuned
DESCRIPTION
NEC's NE461 series of NPN silicon epitaxial bipolar transis-
tors is designed for medium power applications requiring high
dynamic range. This device exhibits an outstanding combina-
tion of high gain and low intermodulation distortion, as well as
low noise figure. The NE461 series offers excellent perfor-
mance and reliability at low cost through NEC's titanium,
platinum, gold metallization system and direct nitride passiva-
tion of the surface of the chip. Devices are available in a low
cost surface mount package (SOT-89) as well as in chip form.
NE46134
TYPICAL OUTPUT POWER
vs. INPUT POWER
f = 1.0 GHz, I
C
= 100 mA
O
O
Input Power, P
IN
(dBm)
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
5 10 15 20 25
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
5 V
10 V
12.5 V
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NE46134-AZ | 功能描述:射頻雙極電源晶體管 NPN Med Pwr Hi-Freq RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| NE46134-T1 | 功能描述:射頻雙極電源晶體管 NPN Med Pwr Hi-Freq RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| NE46134-T1-AZ | 功能描述:射頻雙極電源晶體管 NPN Med Pwr Hi-Freq RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| NE46134-T1-QS-AZ | 功能描述:射頻雙極電源晶體管 NPN High Frequency QS Rating RoHS:否 制造商:M/A-COM Technology Solutions 配置:Single 直流集電極/Base Gain hfe Min:40 最大工作頻率:30 MHz 集電極—發射極最大電壓 VCEO:25 V 發射極 - 基極電壓 VEBO:4 V 集電極連續電流:20 A 最大直流電集電極電流: 功率耗散:250 W 封裝 / 箱體:Case 211-11 封裝:Tray |
| NE461M02 | 功能描述:射頻MOSFET電源晶體管 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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