- 您現在的位置：買賣IC網 > PDF目錄361113 > NE721S01-T1 (NEC Corp.) GENERAL PURPOSE L TO X-BAND GaAs MESFET PDF資料下載
參數資料
| 型號： | NE721S01-T1 |
| 廠商： | NEC Corp. |
| 英文描述： | GENERAL PURPOSE L TO X-BAND GaAs MESFET |
| 中文描述： | 一般目的L至X波段GaAs MESFET器件 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 32K |
| 代理商： | NE721S01-T1 |
GENERAL PURPOSE
L TO X-BAND GaAs MESFET
NE721S01
FEATURES
HIGH POWER GAIN:
7 dB TYP at 12 GHz
HIGH OUTPUT POWER:
15 dBm TYP at 12 GHz
L
G
= 0.8
μ
m, W
G
= 330
μ
m
LOW PHASE NOISE:
-110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz
LOW COST PLASTIC PACKAGE
DESCRIPTION
The NE721S01 is a low cost 0.8
μ
m recessed gate GaAs
MESFET, suitable for both amplifier and oscillator applica-
tions. Larger gate geometry make this device ideal for second
and third stages of low noise amplifiers operating in the 1-12
GHz frequency range. The NE721S01 is fabricated with an
epitaxial process resulting in excellent phase noise in oscilla-
tor applications up to 14 GHz. NEC's latest high performance/
low cost plastic packaging technology make the NE721S01
suitable for GPS, TVRO, DBS, PRD and other commercial
applications.
California Eastern Laboratories
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S01
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
NE721S01
S01
TYP
SYMBOL
UNITS
MIN
MAX
PN
G
S
P
1dB
Phase Noise at V
DS
= 3 V, I
D
= 30 mA, f = 12 GHz, 100 KHz offset
Power Gain at V
DS
= 3 V, I
D
= 30 mA, f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
V
DS
= 3 V, I
DS
= 30 mA
Saturated Drain Current at V
DS
= 3 V, V
GS
= 0
Pinch Off Voltage at V
DS
= 3 V, I
D
= 100
μ
A
Transconductance at V
DS
= 3 V, I
D
= 10 mA
Gate to Source Leak Current at V
GS
= -5 V
Thermal Resistance
dBc/Hz
dB
-110
7.0
dBm
mA
V
mS
μ
A
°
C/W
15.0
60
-2.0
40
1.0
I
DSS
V
P
g
m
I
GSO
R
TH
30
-4.0
20
100
-0.5
10
300
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C)
PART NUMBER
QTY
PACKAGE
LEAD
LENGTH
1.0 mm
1.0 mm
1.0 mm
NE721S01-T1
NE721S01
NE721S01-T1B
1K/Reel
Bulk up to 4K
4K/Reel
S01
S01
S01
ORDERING INFORMATION
1. Source
2. Drain
3. Source
4. Gate
1.9
±
0.2
1.6
0.125
±
0.05
4.0
±
0.2
0.4 MAX
2.0
±
0.2
1
0.65 TYP.
0
2
±
20
±
02
4
2
3
1
J
Part Number
Designator (Letter).
When the letter is
upright, the gate lead
is to the right.
相關PDF資料 |
PDF描述 |
|---|---|
| NE721S01-T1B | GENERAL PURPOSE L TO X-BAND GaAs MESFET |
| NE76038 | LOW NOISE L TO Ku-BAND GaAs MESFET |
| NE76038-T1 | LOW NOISE L TO Ku-BAND GaAs MESFET |
| NE76084S | LOW NOISE L TO Ku BAND GaAs MESFET |
| NE76100 | ACB 5C 5#16S PIN PLUG |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NE721S01-T1B | 制造商:NEC 制造商全稱:NEC 功能描述:GENERAL PURPOSE L TO X-BAND GaAs MESFET |
| NE72218 | 功能描述:射頻GaAs晶體管 RO 551-NE34018 5/04 RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
| NE72218-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
| NE72218-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET |
| NE722S01 | 功能描述:射頻GaAs晶體管 C-X Band GaAs MESFET RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數: 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體: |
發布緊急采購，3分鐘左右您將得到回復。