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參數資料
| 型號： | NP32N055ILE |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 68K |
| 代理商： | NP32N055ILE |
1999
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D14137EJ3V0DS00 (3rd edition)
March 2001 NS CP(K)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
These products are N-channel MOS Field Effect
Transistor designed for high current switching
applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)1
= 24 m
MAX. (V
GS
= 10 V, I
D
= 16 A)
R
DS(on)2
= 29 m
MAX. (V
GS
= 5.0 V, I
D
= 16 A)
Low C
iss
: C
iss
= 1300 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
55
V
Gate to Source Voltage
V
GSS
±
20
V
Drain Current (DC)
Drain Current (Pulse)
Note1
I
D(DC)
±
32
A
I
D(pulse)
±
100
A
Total Power Dissipation (T
A
= 25°C)
P
T
1.2
W
Total Power Dissipation (T
C
= 25°C)
Single Avalanche Current
Note2
P
T
66
W
I
AS
28 / 21 / 8
A
Single Avalanche Energy
Note2
E
AS
7.8 / 44 / 64
mJ
Channel Temperature
T
ch
175
°C
Storage Temperature
T
stg
–55 to +175
°C
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25°C, R
G
= 25
, V
GS
= 20 V
→
0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
2.27
°C/W
Channel to Ambient
R
th(ch-A)
125
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HLE
TO-251
NP32N055ILE
TO-252
The mark
#
shows major revised points.
(TO-251)
(TO-252)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NP32N055SDE-E1-AY | 功能描述:MOSFET N-CH 55V 32A TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP32N055SHE-E1-AY | 功能描述:MOSFET N-CH 55V 32A TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP32N055SLE-E1-AY | 功能描述:MOSFET N-CH 55V 32A TO-252 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NP32N055SLE-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| NP32N055SLE-E1-AZ_NEC | 制造商:Renesas Electronics Corporation 功能描述: |
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