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參數資料
| 型號： | NSL12AW |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | High Current Surface Mount PNP Silicon Transistor(高強度電流，表面安裝的PNP硅晶體管) |
| 中文描述： | 高電流表面貼裝進步黨硅晶體管（高強度電流，表面安裝的新進步黨硅晶體管） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 45K |
| 代理商： | NSL12AW |
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 1
1
Publication Order Number:
NSL12AW/D
NSL12AW
High Current Surface Mount
PNP Silicon Low V
CE(sat)
Transistor for Battery
Operated Applications
Features:
High Current Capability (3 A)
High Power Handling (Up to 650 mW)
Low V
CE(s)
(170 mV Typical @ 1 A)
Small Size
Benefits:
High Specific Current and Power Capability Reduces Required PCB Area
Reduced Parasitic Losses Increases Battery Life
MAXIMUM RATINGS
(T
A
= 25
°
C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
V
CEO
–12
Vdc
Collector-Base Voltage
V
CBO
–12
Vdc
Emitter-Base Voltage
V
EBO
–5.0
Vdc
Collector Current – Continuous
Collector Current
– Peak
I
C
I
CM
–2.0
–3.0
Adc
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 1)
450
3.6
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 1)
275
°
C/W
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
P
D
(Note 2)
650
5.2
mW
mW/
°
C
Thermal Resistance,
Junction to Ambient
R
θ
JA
(Note 2)
192
°
C/W
Thermal Resistance,
Junction to Lead 6
R
θ
JL
105
°
C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
D
Single
1.4
W
Junction and Storage
Temperature Range
T
J
, T
stg
–55 to
+150
°
C
1. FR–4, Minimum Pad, 1 oz Coverage
2. FR–4, 1
″
Pad, 1 oz Coverage
Device
Package
Shipping
ORDERING INFORMATION
NSL12AWT1
SOT–416
3000/Tape & Reel
DEVICE MARKING
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
12 VOLTS
3.0 AMPS
PNP TRANSISTOR
CASE 419B
SOT–363/SC–88
STYLE 20
3
2
1
11
d
11 = Specific Device Code
d
= Date Code
4
5
6
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NSL12AW/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Current Surface Mount PNP Silicon Low VCE(sat)Transistor for Battery Operated Applications |
| NSL12AWT1 | 功能描述:兩極晶體管 - BJT 3A 12V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSL12AWT1G | 功能描述:兩極晶體管 - BJT 3A 12V Switching PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| NSL12TT1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 500MA I(C) | SOT-416 |
| NSL12TT1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications |
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