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參數資料
| 型號： | NTB75N03-06 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK |
| 中文描述： | 75 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 60K |
| 代理商： | NTB75N03-06 |
Semiconductor Components Industries, LLC, 2003
December, 2003 Rev. 4
1
Publication Order Number:
NTP75N0306/D
NTP75N0306,
NTB75N0306
Power MOSFET
75 Amps, 30 Volts
NChannel TO220 and D
2
PAK
This 20 V
GS
gate drive vertical Power MOSFET is a general
purpose part that provides the “best of design” available today in a low
cost power package. This power MOSFET is designed to withstand
high energy in the avalanche and commutation modes. The
DraintoSource Diode has a fast response with soft recovery.
Features
UltraLow R
DS(on)
, Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperatures
High Avalanche Energy Capability
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Typical Applications
Power Supplies
Inductive Loads
PWM Motor Controls
Replaces MTP1306 and MTB1306
D
G
NChannel
S
Device
Package
Shipping
ORDERING INFORMATION
NTP75N0306
TO220
50 Units/Rail
NTB75N0306
D
2
PAK
50 Units/Rail
TO220AB
CASE 221A
Style 5
12
3
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
75N0306
Y
WW
= Device Code
= Year
= Work Week
75
N0306
YWW
1
Gate
3
Source
4
Drain
2
Drain
75
N0306
YWW
1
Gate
3
Source
4
Drain
2
Drain
NTB75N0306T4
D
2
PAK
800/Tape & Reel
http://onsemi.com
5.3 m @ 10 V
R
DS(on)
TYP
75 A
I
D
MAX
V
(BR)DSS
30 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
2
3
D
2
PAK
CASE 418AA
Style 2
4
相關PDF資料 |
PDF描述 |
|---|---|
| NTB75N03-06T4 | Power MOSFET 75 Amps, 30 Volts N−Channel TO−220 and D2PAK |
| NTB75N03L09G | Power MOSFET |
| NTP75N03-06 | Power MOSFET 75 Amps, 30 Volts N-Channel TO-220(75A,30V,N通道，TO-220封裝的功率MOSFET) |
| NTB75N03L09T4 | Power MOSFET |
| NTQD6866R2 | Power MOSFET 6.9 Amps, 20 Volts |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NTB75N03-06T4 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03-6G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03-6T4G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03L09 | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB75N03L09G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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