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參數(shù)資料
| 型號： | NTQD6866R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET 6.9 Amps, 20 Volts |
| 中文描述： | 4700 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, CASE 948S-01, TSSOP-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 71K |
| 代理商： | NTQD6866R2 |
Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
NTQD6866R2/D
NTQD6866R2
Power MOSFET
6.9 Amps, 20 Volts
N–Channel TSSOP–8
Features
New Low Profile TSSOP–8 Package
Ultra Low RDS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperatures
Applications
Power Management in Portable and Battery–Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
Battery Applications
NoteBook PC
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage – Continuous
Thermal Resistance – Single Die
Junction–to–Ambient (Note 1)
Total Power Dissipation @ TA = 25 C
Continuous Drain Current @ TA = 25 C
Pulsed Drain Current (Note 4)
Thermal Resistance – Single Die
Junction–to–Ambient (Note 2)
Total Power Dissipation @ TA = 25 C
Continuous Drain Current @ TA = 25 C
Continuous Drain Current @ TA = 70 C
Pulsed Drain Current (Note 4)
Thermal Resistance – Single Die
Junction–to–Ambient (Note 3)
Total Power Dissipation @ TA = 25 C
Continuous Drain Current @ TA = 25 C
Continuous Drain Current @ TA = 70 C
Pulsed Drain Current (Note 4)
1. Mounted onto a 2
″
square FR–4 board (1
″
sq. 2 oz Cu 0.06
″
thick single sided),
t
<
10 seconds.
2. Mounted onto a 2
″
square FR–4 board (1
″
sq. 2 oz Cu 0.06
″
thick single sided),
t = 10 seconds.
3. Minimum FR–4 or G–10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
VDSS
VDGR
VGS
20
20
12
Vdc
Vdc
Vdc
RJA
PD
ID
IDM
62.5
2.0
6.9
24
°
C/W
W
Adc
Adc
RJA
PD
ID
ID
IDM
88
1.42
5.8
4.6
20
°
C/W
W
Adc
Adc
Adc
RJA
PD
ID
ID
IDM
132
0.94
4.7
3.8
14
°
C/W
W
Adc
Adc
Adc
Device
Package
Shipping
ORDERING INFORMATION
TSSOP–8
CASE 948S
PLASTIC
1
MARKING DIAGRAM
& PIN ASSIGNMENT
N–Channel
D
S1
G1
8
2
3
4
S1
G1
S2
G2
1
7
6
5
8
D
D
D
D
Top View
NTQD6866R2
TSSOP–8
4000/Tape & Reel
N–Channel
D
S2
G2
866
YWW
6.9 AMPERES
20 VOLTS
30 m
@ VGS = 4.5 V
866
YWW
= Device Code
= Date Code
http://onsemi.com
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| NTQD6866R2G | 功能描述:MOSFET 20V 5.8A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6.6 Amps, 20 Volts |
| NTQD6968N | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968NR2 | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTQD6968NR2G | 功能描述:MOSFET 20V 7A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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