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參數資料
| 型號： | NTR0202PLT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package |
| 中文描述： | 400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
| 封裝： | MINIATURE, CASE 318-09, TO-236, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 54K |
| 代理商： | NTR0202PLT1 |
Semiconductor Components Industries, LLC, 2004
July, 2004 Rev. 2
1
Publication Order Number:
NTR0202PL/D
NTR0202PL
Power MOSFET
20 V, 400 mA, PChannel
SOT23 Package
Features
Low R
DS(on)
Provides Higher Efficiency and Extends Battery Life
R
DSon
= 0.80 , V
GS
= 10 V
R
DSon
= 1.10 , V
GS
= 4.5 V
Miniature SOT23 Surface Mount Package Saves Board Space
PbFree Package is Available
Applications
DCDC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
20
V
GatetoSource Voltage Continuous
V
GS
20
V
Continuous Drain Current @ T
= 25
°
C
Pulsed Drain Current (t
p
≤
10 s)
I
D
I
DM
0.4
1.0
A
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
P
D
225
mW
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Thermal Resistance JunctiontoAmbient
R
JA
556
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 s
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2%.
D
G
S
Device
Package
Shipping
ORDERING INFORMATION
NTR0202PLT1
SOT23
3000 Tape & Reel
PChannel
NTR0202PLT3
SOT23
10,000 Tape & Reel
http://onsemi.com
20 V
550 m @ 10 V
R
DS(on)
TYP
400 mA
I
D
MAX
V
(BR)DSS
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
SOT23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
2
PL
W
= Specific Device Code
= Work Week
3
1
3
Drain
1
Gate
2
Source
PLW
NTR0202PLT3G
SOT23
(PbFree)
10,000 Tape & Reel
NTR0202PLT1G
SOT23
(PbFree)
3000 Tape & Reel
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| NTR0202PLT3G | Power MOSFET −20 V, −400 mA, P−Channel SOT−23 Package |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTR0202PLT1G | 功能描述:MOSFET -20V -400mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR0202PLT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 20 V 550 mOhm 225 mW Surface Mount Power MOSFET - SOT-23 |
| NTR0202PLT3 | 功能描述:MOSFET -20V -400mA RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR0202PLT3G | 功能描述:MOSFET -20V -400mA P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTR02D1000CTRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
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