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參數(shù)資料
| 型號(hào)： | NTD12N10 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement Mode DPAK(12 A, 100 V，N通道，增強(qiáng)模式，DPAK封裝的功率MOSFET) |
| 中文描述： | 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C, DPAK-3 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 80K |
| 代理商： | NTD12N10 |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 7
1
Publication Order Number:
NTD12N10/D
NTD12N10
Preferred Device
Power MOSFET
12 Amps, 100 Volts
NChannel EnhancementMode DPAK
Features
SourcetoDrain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
I
DSS
and R
DS(on)
Specified at Elevated Temperature
Mounting Information Provided for the DPAK Package
PbFree Packages are Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
100
Vdc
DraintoSource Voltage (R
GS
= 1.0 M )
V
DGR
100
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (t
p
≤
10 ms)
V
GS
V
GSM
±
20
±
30
Vdc
Vpk
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
=100
°
C
Pulsed (Note 3)
I
D
I
D
I
DM
12
7.0
36
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
P
D
56.6
0.38
1.76
1.28
W
W/
°
C
W
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
+175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 50 Vdc, V
GS
= 10 Vdc,
I
L
= 12 Apk, L = 1.0 mH, R
G
= 25 )
E
AS
75
mJ
Thermal Resistance
Junction to Case
Junction to Ambient (Note 1)
Junction to Ambient (Note 2)
R
JC
R
JA
R
JA
2.65
85
117
°
C/W
Maximum Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
3. Pulse Test: Pulse Width = 10 s, Duty Cycle = 2%.
http://onsemi.com
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y
WW
T12N10
G
= Year
= Work Week
= Device Code
= PbFree Package
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Y
T
N
1 2
3
4
Y
T
N
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
STYLE 2
123
4
NChannel
D
S
G
100 V
165 m @ 10 V
R
DS(on)
TYP
12 A
I
D
MAX
V
(BR)DSS
Preferred
devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD12N10-001 | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK |
| NTD12N10-1G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10G | 功能描述:MOSFET 100V 12A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD12N10G | 制造商:ON Semiconductor 功能描述:MOSFET |
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