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參數(shù)資料
| 型號： | NTD15N06L |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 15 Amps, 60 Volts, Logic Level |
| 中文描述： | 15 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 93K |
| 代理商： | NTD15N06L |
Semiconductor Components Industries, LLC, 2003
September, 2003 Rev. 1
1
Publication Order Number:
NTD15N06L/D
NTD15N06L
Power MOSFET
15 Amps, 60 Volts, Logic Level
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 1.0 M )
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
Total Power Dissipation @ T
J
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Operating and Storage Temperature Range
V
DSS
V
DGR
60
60
Vdc
Vdc
Vdc
10 ms)
V
GS
V
GS
15
20
10 s)
I
D
I
D
I
DM
P
D
15
10
45
48
0.32
2.1
1.5
55 to
+175
Adc
Apk
W
W/
°
C
W
W
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc, L = 1.0 mH,
I
L(pk)
= 11 A, V
DS
= 60 Vdc)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
61
mJ
R
JC
R
JA
R
JA
3.13
71.4
100
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size,.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
15 AMPERES
60 VOLTS
R
DS(on)
= 85 m TYP)
Device
Package
Shipping
ORDERING INFORMATION
NTD15N06L
DPAK
75 Units/Rail
http://onsemi.com
NChannel
D
S
G
NTD15N06L1
DPAK
Straight Lead
75 Units/Rail
NTD15N06LT4
DPAK
2500/Tape & Reel
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
Style 2
MARKING DIAGRAMS
15N06L
Y
WW
Device Code
= Year
= Work Week
Y
1
1 2
3
4
Y
1
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
123
4
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD15N06L-001 | 功能描述:MOSFET N-CH 60V 15A IPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| NTD15N06L-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 15 Amps, 60 Volts, Logic Level |
| NTD15N06L-1G | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD15N06LG | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) DPAK Rail 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述:MOSFET |
| NTD15N06LT4 | 功能描述:MOSFET N-CH 60V 15A DPAK RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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