- 您現在的位置：買賣IC網 > PDF目錄361155 > NTD20N06LT4 (ON SEMICONDUCTOR) Power MOSFET 20 Amps, 60 Volts, Logic Level PDF資料下載
參數資料
| 型號： | NTD20N06LT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 20 Amps, 60 Volts, Logic Level |
| 中文描述： | 20 A, 60 V, 0.048 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/12頁 |
| 文件大小： | 89K |
| 代理商： | NTD20N06LT4 |
Semiconductor Components Industries, LLC, 2003
August, 2003 Rev. 1
1
Publication Order Number:
NTD20N06L/D
NTD20N06L
Power MOSFET
20 Amps, 60 Volts, Logic Level
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 10 M
)
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1.)
Total Power Dissipation @ T
A
= 25
°
C (Note 2.)
Operating and Storage Temperature Range
V
DSS
V
DGR
60
60
Vdc
Vdc
Vdc
10 ms)
V
GS
V
GS
15
20
10
μ
s)
I
D
I
D
I
DM
P
D
20
10
60
60
0.40
1.88
1.36
55 to
+175
128
Adc
Apk
W
W/
°
C
W
W
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 16 A, V
DS
= 60 Vdc)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1.)
JunctiontoAmbient (Note 2.)
E
AS
mJ
R
θ
JC
R
θ
JA
R
θ
JA
2.5
80
110
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using recommended pad size,
(Cu Area 0.412 in
2
).
NChannel
D
S
G
http://onsemi.com
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
Style 2
MARKING DIAGRAMS
20N06L
Y
WW
Device Code
= Year
= Work Week
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
123
4
Device
Package
Shipping
ORDERING INFORMATION
NTD20N06L
DPAK
75 Units/Rail
NTD20N06L1
DPAK
Straight Lead
75 Units/Rail
NTD20N06LT4
DPAK
2500 Tape & Reel
Y
2
Y
2
60 V
39 m
5.0 V
R
DS(on)
TYP
20 A
(Note 1)
I
D
MAX
V
(BR)DSS
相關PDF資料 |
PDF描述 |
|---|---|
| NTD20P06L | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LG | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LT4 | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD20P06LT4G | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD23N03R | 23 Amps, 25 Volts, N−Channel DPAK |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NTD20N06LT4G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N06T4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N06T4G | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N08/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:80 V Power MOSFET |
| NTD20P06L | 功能描述:MOSFET -60V -15.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。