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參數資料
| 型號： | NTD20P06LT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| 中文描述： | 15.5 A, 60 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 73K |
| 代理商： | NTD20P06LT4 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 3
1
Publication Order Number:
NTD20P06L/D
NTD20P06L
Power MOSFET
60 V, 15.5 A, Single PChannel, DPAK
Features
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
PbFree Packages are Available
Applications
Bridge Circuits
Power Supplies, Power Motor Controls
DCDC Conversion
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
V
GatetoSource
Voltage
Continuous
V
GS
20
V
NonRepetitive
t
p
10 ms
V
GSM
30
Continuous
Drain Current
(Note 1)
Steady State
T
A
= 25
°
C
I
D
15.5
A
Power Dissipa-
tion (Note 1)
Steady State
T
A
= 25
°
C
P
D
65
W
Pulsed Drain
Current
t
p
= 10 s
I
DM
50
A
Operating Junction and Storage Temperature
T
J
,
T
STG
55 to
175
°
C
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 25 V, V
GS
= 5 V, I
PK
= 15 A,
L = 2.7 mH, R
G
= 25 )
E
AS
304
mJ
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
JunctiontoCase (Drain)
R
JC
2.3
°
C/W
JunctiontoAmbient – Steady State (Note 1)
R
JA
80
JunctiontoAmbient – Steady State (Note 2)
R
JA
110
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.)
PChannel
D
S
G
http://onsemi.com
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
Style 2
MARKING DIAGRAMS
20P06L
Y
WW
Device Code
= Year
= Work Week
1 2
3
4
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
123
4
60 V
130 m @ 5.0 V
I
D
MAX
(Note 1)
V
(BR)DSS
Y
T
2
Y
T
2
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
R
DS(on)
TYP
15.5 A
相關PDF資料 |
PDF描述 |
|---|---|
| NTD20P06LT4G | Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK |
| NTD23N03R | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1 | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03R-1G | 23 Amps, 25 Volts, N−Channel DPAK |
| NTD23N03RG | 23 Amps, 25 Volts, N−Channel DPAK |
相關代理商/技術參數 |
參數描述 |
|---|---|
| NTD20P06LT4G | 功能描述:MOSFET -60V -15.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20P06LT4G | 制造商:ON Semiconductor 功能描述:P CHANNEL MOSFET -60V 15.5A D-PAK |
| NTD22 | 制造商:OTAX Corporation 功能描述: |
| NTD23N03R | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD23N03R-001 | 功能描述:MOSFET 25V 23A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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