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參數資料
| 型號： | NTD3055L170 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 9.0Amps, 60Volts Logic Level N-Channel DPAK(9.0A, 60 V，邏輯電平，N通道，DPAK封裝的功率MOSFET) |
| 中文描述： | 9 A, 60 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 77K |
| 代理商： | NTD3055L170 |
Semiconductor Components Industries, LLC, 2004
August, 2004 Rev. 3
1
Publication Order Number:
NTD3055L170/D
NTD3055L170
Power MOSFET
9.0 Amps, 60 Volts, Logic Level,
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 10 M )
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Operating and Storage Temperature Range
V
DSS
V
DGR
60
60
Vdc
Vdc
Vdc
10 ms)
V
GS
V
GS
15
20
10 s)
I
D
I
D
I
DM
P
D
9.0
3.0
27
28.5
0.19
2.1
1.5
55 to
175
30
Adc
Apk
W
W/
°
C
W
W
°
C
T
J
, T
stg
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
L = 1.0 mH, I
L
(pk) = 7.75 A, V
DS
= 60 Vdc)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
mJ
R
JC
R
JA
R
JA
5.2
71.4
100
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
9.0 AMPERES, 60 VOLTS
R
DS(on)
= 170 m
NChannel
D
S
G
DPAK
CASE 369AA
(Surface Mounted)
STYLE 2
1 2
3
4
DPAK3
CASE 369D
(Straight Lead)
STYLE 2
MARKING
DIAGRAMS
1
Gate
3
Source
2
Drain
4
Drain
A
3
1
Gate
3
Source
2
Drain
4
Drain
A
3
3170L
A
Y
W
= Device Code
= Assembly Location
= Year
= Work Week
123
4
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTD3055L170.1G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTD3055L170_12 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTD3055L170-001 | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD3055L170-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK |
| NTD3055L170-1G | 功能描述:MOSFET 60V 9A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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