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參數資料
| 型號： | NTD32N06LT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 32 Amps, 60 Volts, Logic Level(N−Channel DPAK) |
| 中文描述： | 32 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 66K |
| 代理商： | NTD32N06LT4 |
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 3
1
Publication Order Number:
NTD32N06L/D
NTD32N06L
Power MOSFET
32 Amps, 60 Volts, Logic Level
NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Smaller Package than MTB30N06VL
Lower R
DS(on)
, V
DS(on)
, and Total Gate Charge
Lower and Tighter V
SD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 10 M )
GatetoSource Voltage
Continuous
NonRepetitive (t
p
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
Total Power Dissipation @ T
A
= 25
°
C
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Operating and Storage Temperature Range
V
DSS
V
DGR
60
60
Vdc
Vdc
Vdc
10 ms)
V
GS
V
GS
20
30
10 s)
I
D
I
D
I
DM
32
22
90
Adc
Apk
P
D
93.75
0.625
2.88
1.5
W
W/
°
C
W
W
T
J
, T
stg
55 to
+175
313
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C (Note 3)
(V
DD
= 50 Vdc, V
GS
= 5 Vdc, L = 1.0 mH,
I
L(pk)
= 25 A, V
DS
= 60 Vdc, R
G
= 25 )
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
E
AS
mJ
R
JC
R
JA
R
JA
1.6
52
100
°
C/W
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to FR4 board using 0.5
″
pad size.
2. When surface mounted to FR4 board using minimum recommended pad
size.
3. Repetitive rating; pulse width limited by maximum junction temperature.
NChannel
D
S
G
http://onsemi.com
2500/Tape & Reel
Device
Package
Shipping
ORDERING INFORMATION
NTD32N06L
DPAK
75 Units/Rail
NTD32N06L1
DPAK
Straight Lead
75 Units/Rail
NTD32N06LT4
DPAK
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
(Surface Mount)
Style 2
MARKING DIAGRAMS
32N06L
Y
WW
Device Code
= Year
= Work Week
Y
3
1 2
3
4
Y
3
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
(Straight Lead)
Style 2
123
4
V
DSS
R
DS(ON)
TYP
I
D
MAX
60 V
23.7 m
32 A
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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| NTD32N06LT4G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06T4 | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD32N06T4G | 功能描述:MOSFET 60V 32A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| NTD3808N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 16 V, 76 A, Single N-Channel, DPAK/IPAK |
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