欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數資料
型號: NTD4404N
廠商: ON SEMICONDUCTOR
元件分類: JFETs
英文描述: Power MOSFET 85 Amps, 24 Volts N-Channel DPAK(85A,24V,N通道,DPAK,功率MOSFET)
中文描述: 32 A, 24 V, 0.00517 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: CASE 369C-01, DPAK-3
文件頁數: 1/8頁
文件大小: 73K
代理商: NTD4404N
Semiconductor Components Industries, LLC, 2004
December, 2004 Rev. 5
1
Publication Order Number:
NTD4404N/D
NTD4404N
Power MOSFET
85 Amps, 24 Volts
NChannel DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C Unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
24
V
dc
GatetoSource Voltage Continuous
V
GS
±
20
V
dc
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C, Limited by Package
Continuous @ T
A
= 25
°
C, Limited by Wires
Single Pulse (t
p
10 s)
R
JC
P
D
I
D
I
D
I
DM
1.6
78.1
85
32
96
°
C/W
W
A
A
A
Thermal Resistance, JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
52
2.4
16
°
C/W
W
A
Thermal Resistance, JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
100
1.25
12
°
C/W
W
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 23 V
dc
, V
GS
= 10 V
dc
, I
L
= 13.4 A
pk
,
L = 1 mH, R
G
= 25 )
E
AS
90
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from Case for 10 Seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
85 AMPERES, 24 VOLTS
R
DS(on)
= 4.23 m (Min)
R
DS(on)
= 5.17 m (Max)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y
WW
4404N
= Year
= Work Week
= Specific Device Code
DPAK
CASE 369C
STYLE 2
D
S
G
NChannel
1
3
2
4
Straight Lead DPAK3
CASE 369D
STYLE 2
Y
4
0
4
1 Gate
2 Drain
3 Source
4 Drain
1
3
2
1 2
3
4
123
4
YWW
44
04N
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
相關PDF資料
PDF描述
NTD4804N Power MOSFET 30 V, 117 A(30V, 117A, 功率MOSFET)
NTD4805N Power MOSFET(功率MOSFET)
NTD4810N Power MOSFET 30 V, 54 A(30V, 54A, 功率MOSFET)
NTD4813N 30V,40A,Single N Channel,DPAK/IPAK Power MOSFET(30V,40A,N溝道功率MOSFET)
NTD60N02R Power MOSFET 62 A, 24 V, N−Channel, DPAK
相關代理商/技術參數
參數描述
NTD4404N1 功能描述:MOSFET NFET 24V 4.7MR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4404N1G 功能描述:MOSFET NFET 24V 4.7MR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD4404NT4G 功能描述:MOSFET NFET 24V 4.7MR TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD45 制造商:EDI 制造商全稱:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD4804 制造商:ON Semiconductor 功能描述:MOSFET N CH 30V 14.5A IPAKTR
主站蜘蛛池模板: 通化市| 杂多县| 澄江县| 旅游| 马尔康县| 绥棱县| 千阳县| 台州市| 历史| 长岭县| 晋中市| 左贡县| 开平市| 永修县| 大荔县| 临朐县| 宣武区| 柘城县| 叙永县| 克什克腾旗| 盱眙县| 资阳市| 饶河县| 巴中市| 扎赉特旗| 望城县| 白银市| 当阳市| 昆明市| 河北区| 连南| 中阳县| 太仆寺旗| 延津县| 南昌市| 抚松县| 吐鲁番市| 东乡族自治县| 石河子市| 余庆县| 县级市|