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參數(shù)資料
| 型號： | NTF3055L175 |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 2.0 A, 60 V, Logic Level N-Channel SOT-223(2A,60V邏輯電平,N通道，SOT-223封裝的功率MOSFET) |
| 中文描述： | 功率MOSFET 2.0甲，60伏特，邏輯電平N溝道的SOT - 223（第2A，60V的邏輯電平，?通道，采用SOT - 223封裝的功率MOSFET的） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 63K |
| 代理商： | NTF3055L175 |
Publication Order Number:
NTF3055L175/D
Semiconductor Components Industries, LLC, 2004
February, 2004 Rev. 2
1
NTF3055L175
Preferred Device
Power MOSFET
2.0 A, 60 V, Logic Level
NChannel SOT223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
60
Vdc
DraintoGate Voltage (R
GS
= 1.0 M )
V
DGR
60
Vdc
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
≤
10 ms)
V
GS
±
15
±
20
Vdc
Vpk
Drain Current
Continuous @ T
A
= 25
°
C
Continuous @ T
A
= 100
°
C
Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
2.0
1.2
6.0
Adc
Apk
Total Power Dissipation @ T
A
= 25
°
C (Note 1)
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Derate above 25
°
C
P
D
2.1
1.3
0.014
W
W
W/
°
C
Operating and Storage Temperature Range
T
J
, T
stg
55
to 175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L(pk)
= 3.6 A, L = 10 mH, V
DS
= 60 Vdc)
E
AS
65
mJ
Thermal Resistance
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
R
JA
R
JA
72.3
114
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using 1
″
pad size, 1 oz. (Cu. Area
0.995 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 22.4 oz. (Cu. Area 0.272 in
2
).
D
G
S
1
2
3
4
2.0 A, 60 V
R
DS(on)
= 175 m
NChannel
SOT223
CASE 318E
STYLE 3
LWW
MARKING DIAGRAM
5L175
5L175
L
WW
= Device Code
= Location Code
= Work Week
PIN ASSIGNMENT
3
Source
2
1
4
Gate
Drain
Drain
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
Preferred
devices are recommended choices for future
use and best overall value.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTF3055L175T1 | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L175T1G | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L175T3 | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L175T3G | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTF3055L175T3LF | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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