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參數資料
| 型號： | NTK3142P |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 55K |
| 代理商： | NTK3142P |
Semiconductor Components Industries, LLC, 2006
February, 2006 Rev. 1
1
Publication Order Number:
NTK3142P/D
NTK3142P
Small Signal MOSFET
20 V, 280 mA, PChannel with ESD
Protection, SOT723
Features
Enables High Density PCB Manufacturing
44% Smaller Footprint than SC89 and 38% Thinner than SC89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, 1.8 V R
DS(on)
Rating
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology.
This is a PbFree Device
Applications
Interfacing, Switching
High Speed Switching
Cellular Phones, PDA’s
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current (Note 1)
V
DSS
V
GS
20
±
8.0
260
185
280
400
V
V
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
mA
t
Steady
State
t
5 s
5 s
Power Dissipation
(Note 1)
T
A
= 25
°
C
P
D
mW
500
215
155
280
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
I
D
mA
Power Dissipation
(Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
T
A
= 25
°
C
P
D
mW
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
310
55 to
150
mA
°
C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
240
260
mA
°
C
T
L
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [1 oz] including traces)
2. Surfacemounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP
2.7 @ 4.5 V
I
D
Max
20 V
4.1 @ 2.5 V
280 mA
Device
Package
Shipping
ORDERING INFORMATION
NTK3142PT1G
SOT723
(PbFree)
4000/Tape & Reel
4 mm Pitch
CASE 631AA
SOT723
MARKING DIAGRAM
Top View
SOT723 (3LEAD)
3
1
2
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
6.1 @ 1.8 V
KB M
1
KB
M
= Specific Device Code
= Date Code
1 Gate
2 Source
3 Drain
NTK3142PT5G
SOT723
(PbFree)
8000/Tape & Reel
2 mm Pitch
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTK3142PT1G | 功能描述:MOSFET PFET 20V TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTK3142PT1H | 制造商:ON Semiconductor 功能描述:HALOGEN FREE PFET SOT723 |
| NTK3142PT5G | 功能描述:MOSFET PFET SOT723 20V 2.8A 3.4mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTL02C10NTRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel |
| NTL02C1N8TRF | 制造商:NIC Components Corp 功能描述:- Tape and Reel 制造商:NIC Components Corp 功能描述:Ind Chip Thin Film 1.8nH 0.2nH 500MHz 10Q-Factor 420mA 0201 T/R |
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