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參數資料
| 型號： | NTMD2C02R2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 2 Amps, 20 Volts |
| 中文描述： | 5.2 A, 20 V, 0.043 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 751-07, SOIC-8 |
| 文件頁數： | 1/16頁 |
| 文件大小： | 117K |
| 代理商： | NTMD2C02R2 |
Semiconductor Components Industries, LLC, 2002
September, 2002 – Rev. 0
1
Publication Order Number:
NTMD2C02R2/D
NTMD2C02R2
Preferred Device
Power MOSFET
2 Amps, 20 Volts
Complementary SO–8, Dual
These miniature surface mount MOSFETs feature ultra low R
DS(on)
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain–to–source diode has a very low reverse recovery time.
MiniMOS devices are designed for use in low voltage, high speed
switching applications where power efficiency is important. Typical
applications are dc–dc converters, and power management in portable
and battery powered products such as computers, printers, cellular and
cordless phones. They can also be used for low voltage motor controls
in mass storage products such as disk drives and tape drives.
Ultra Low R
DS(on)
Provides Higher Efficiency and Extends
Battery Life
Logic Level Gate Drive – Can Be Driven by Logic ICs
Miniature SO–8 Surface Mount Package – Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, With Soft Recovery
I
DSS
Specified at Elevated Temperature
Mounting Information for SO–8 Package Provided
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted) (Note 1)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
N–Channel
P–Channel
V
DSS
20
20
Vdc
Gate–to–Source Voltage
V
GS
I
D
±
12
Vdc
Drain Current – Continuous
N–Channel
P–Channel
N–Channel
P–Channel
– Pulsed
I
DM
5.2
3.4
48
17
A
Operating and Storage Temperature Range
T
J
and
T
stg
–55 to
150
°
C
Total Power Dissipation @ T
A
= 25
°
C
(Note 2)
P
D
2.0
Watts
Thermal Resistance – Junction to Ambient
(Note 2)
R
θ
JA
62.5
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds.
1. Negative signs for P–Channel device omitted for clarity.
2. Mounted on 2
″
square FR4 board (1
″
sq. 2 oz. Cu 0.06
″
thick single sided) with
one die operating, 10 sec. max.
T
L
260
°
C
N–Source
1
2
3
4
8
7
6
5
Top View
N–Gate
P–Source
P–Gate
N–Drain
N–Drain
P–Drain
P–Drain
2 AMPERES
20 VOLTS
R
DS(on)
= 43 m (N–Channel)
R
DS(on)
= 120 m (P–Channel)
Device
Package
Shipping
ORDERING INFORMATION
NTMD2C02R2
SO–8
2500/Tape & Reel
D
S
G
P–Channel
D
S
G
N–Channel
SO–8, Dual
CASE 751
STYLE 14
LYWW
MARKING
DIAGRAM
D2C02
PIN ASSIGNMENT
1
8
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
D2C02 = Specific Device Code
L
= Location Code
Y
= Year
WW
= Work Week
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相關代理商/技術參數 |
參數描述 |
|---|---|
| NTMD2C02R2G | 功能描述:MOSFET 20V 5.2A Complementary RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2C02R2SG | 功能描述:MOSFET COMP20V 2A .043R TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2P01R2 | 功能描述:MOSFET -16V 2.3A Dual RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD2P01R2G | 功能描述:MOSFET -16V 2.3A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTMD3N08 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 80V V(BR)DSS | SO |
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